中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47304-047304.doi: 10.1088/1674-1056/26/4/047304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Quantum transport through a Z-shaped silicene nanoribbon

A Ahmadi Fouladi   

  1. Department of Physics, Sari Branch, Islamic Azad University, Sari, Iran
  • 收稿日期:2016-11-18 修回日期:2017-01-16 出版日期:2017-04-05 发布日期:2017-04-05
  • 通讯作者: A Ahmadi Fouladi E-mail:a.ahmadifouladi@iausari.ac.ir
  • 基金资助:
    Project supported by the Sari Branch, Islamic Azad University, Iran Grant No. 1-24850.

Quantum transport through a Z-shaped silicene nanoribbon

A Ahmadi Fouladi   

  1. Department of Physics, Sari Branch, Islamic Azad University, Sari, Iran
  • Received:2016-11-18 Revised:2017-01-16 Online:2017-04-05 Published:2017-04-05
  • Contact: A Ahmadi Fouladi E-mail:a.ahmadifouladi@iausari.ac.ir
  • Supported by:
    Project supported by the Sari Branch, Islamic Azad University, Iran Grant No. 1-24850.

摘要: In this work, the electronic transport properties of Z-shaped silicene nanoribbon (ZsSiNR) structure are investigated. The calculations are based on the tight-binding model and Green's function method in Landauer-Büttiker formalism, in which the electronic density of states (DOS), transmission probability, and current-voltage characteristics of the system are calculated, numerically. It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system. It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction (SOI) strength. Also, the semiconductor to metallic transition occurs by increasing the SOI strength. The present theoretical results may be useful to design silicene-based devices in nanoelectronics.

关键词: Z-shaped silicene nanoribbon, electronic transport, Green', s function method, spin-orbit interaction

Abstract: In this work, the electronic transport properties of Z-shaped silicene nanoribbon (ZsSiNR) structure are investigated. The calculations are based on the tight-binding model and Green's function method in Landauer-Büttiker formalism, in which the electronic density of states (DOS), transmission probability, and current-voltage characteristics of the system are calculated, numerically. It is shown that the geometry of the ZsSiNR structure can play an important role to control the electron transport through the system. It is observed that the intensity of electron localization at the edges of the ZsSiNR decreases with the increase of the spin-orbit interaction (SOI) strength. Also, the semiconductor to metallic transition occurs by increasing the SOI strength. The present theoretical results may be useful to design silicene-based devices in nanoelectronics.

Key words: Z-shaped silicene nanoribbon, electronic transport, Green's function method, spin-orbit interaction

中图分类号:  (Electronic transport in mesoscopic systems)

  • 73.23.-b
73.63.-b (Electronic transport in nanoscale materials and structures)