Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

doi:10.1088/1674-1056/22/1/017202

Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (1): 17202-017202.doi: 10.1088/1674-1056/22/1/017202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

张雪锋^{a b}, 王莉^b, 刘杰^b, 魏崃^b, 许键^b

a School of Electronics and Information, Nantong University, Nantong 226019, China;
b Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA

收稿日期:2012-05-11 修回日期:2012-06-11 出版日期:2012-12-01 发布日期:2012-12-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61204018).

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Zhang Xue-Feng (张雪锋)^{a b}, Wang Li (王莉)^b, Liu Jie (刘杰)^b, Wei Lai (魏崃)^b, Xu Jian (许键)^b

a School of Electronics and Information, Nantong University, Nantong 226019, China;
b Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA

Received:2012-05-11 Revised:2012-06-11 Online:2012-12-01 Published:2012-12-01
Contact: Xu Jian E-mail:jianxu@engr.psu.edu
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61204018).

摘要/Abstract

摘要： Electrical properties of AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. Self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

关键词: AlInN/GaN heterostructure, high-electron mobility transistor (HEMT), cryogenic temperature, two-dimensional electron gas (2DEG) mobility

Abstract: Electrical properties of AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investigated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. Self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density.

Key words: AlInN/GaN heterostructure, high-electron mobility transistor (HEMT), cryogenic temperature, two-dimensional electron gas (2DEG) mobility

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

张雪锋, 王莉, 刘杰, 魏崃, 许键. Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation[J]. Chin. Phys. B, 2013, 22(1): 17202-017202.

Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键). Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation[J]. Chin. Phys. B, 2013, 22(1): 17202-017202.

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Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation

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