Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

doi:10.1088/1674-1056/21/7/074203

中国物理B ›› 2012, Vol. 21 ›› Issue (7): 74203-074203.doi: 10.1088/1674-1056/21/7/074203

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

熊康, 肖希, 胡应涛, 李智勇, 储涛, 俞育德, 余金中

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2011-11-10 修回日期:2011-12-31 出版日期:2012-06-01 发布日期:2012-06-01
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301701, 2012CB933502, and 2012CB933504), the National Natural Science Foundation of China (Grant Nos. 60877036 and 61107048), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-EW-102).

Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

Xiong Kang(熊康), Xiao Xi(肖希), Hu Ying-Tao(胡应涛), Li Zhi-Yong(李智勇), Chu Tao(储涛), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中)^†

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2011-11-10 Revised:2011-12-31 Online:2012-06-01 Published:2012-06-01
Contact: Yu Jin-Zhong E-mail:jzyu@semi.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301701, 2012CB933502, and 2012CB933504), the National Natural Science Foundation of China (Grant Nos. 60877036 and 61107048), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KGCX2-EW-102).

摘要/Abstract

摘要： We propose a novel resonator containing an elliptical microring based on silicon-on-insulator platform. Simulations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits.

关键词: elliptical microring resonator, silicon-on-insulator, mode coupling, intrinsic quality factor

Abstract: We propose a novel resonator containing an elliptical microring based on silicon-on-insulator platform. Simulations using the three-dimensional finite-difference time-domain method show that the novel elliptical microring can efficiently enhance the mode coupling between straight bus waveguides and resonator waveguides or between adjacent resonators while preserving relatively high intrinsic quality factors with large free spectral range. The proposed resonator would be an alternative choice for future high-density integrated photonic circuits.

Key words: elliptical microring resonator, silicon-on-insulator, mode coupling, intrinsic quality factor

中图分类号: (Resonators, cavities, amplifiers, arrays, and rings)

42.60.Da

42.79.-e (Optical elements, devices, and systems) 42.82.-m (Integrated optics)

熊康, 肖希, 胡应涛, 李智勇, 储涛, 俞育德, 余金中 . Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits[J]. 中国物理B, 2012, 21(7): 74203-074203.

Xiong Kang(熊康), Xiao Xi(肖希), Hu Ying-Tao(胡应涛), Li Zhi-Yong(李智勇), Chu Tao(储涛), Yu Yu-De(俞育德), and Yu Jin-Zhong(余金中) . Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits[J]. Chin. Phys. B, 2012, 21(7): 74203-074203.

参考文献 20

[1]	Soref R 2006 IEEE J. Sel. Top. Quantum Electron. 12 1678
[2]	Xiao S, Khan M, Shen H and Qi M H 2008 J. Lightw. Technol. 26 228
[3]	Chu T, Fujioka N and Ishizaka M 2009 Opt. Express 17 14063
[4]	Xu Q, Manipatruni S, Schmidt B, Shakya J and Lipson M 2007 Opt. Express 15 430
[5]	Sherwood-Droz N, Wang H, Chen L, Lee B G, Biberman A, Bergman K and Lipson M 2008 Opt. Express 16 19395
[6]	Xia F, Sekaric L and Vlasov Y 2007 Nat. Photon. 1 65
[7]	Huang Q Z, Yu J Z, Chen S W, Xu X J, Han W H and Fan Z C 2008 Chin. Phys. B 17 2562
[8]	Hu Y T, Xiao X, Li Z Y, Li Y T, Fan Z C, Han W H, Yu Y D and Yu J Z 2011 Chin. Phys. B 20 074208
[9]	Xia F, Sekaric L and Vlasov Y 2008 Opt. Express 14 3872
[10]	Chin M K and Ho S T 1998 J. Lightw. Technol. 16 1433
[11]	Hosseini E, Yegnanarayanan S, Atabaki A, Soltani M and Adibi A 2008 Opt. Express 18 2127
[12]	Haus H, Huang W P, Kawakami S and Whitaker N A 1987 J. Lightw. Technol. 5 16
[13]	Little B E, Chu S T, Haus H, Foresi J and Laine J P 1997 J. Lightw. Technol. 15 998
[14]	Manolatou C, Khan M, Fan S, Villeneuve P, Haus H and Joannopoulos J 1999 IEEE J. Quantum Electron. 35 1322
[15]	Soltani M, Yegnanarayanan S, Li Q and Adibi A 2010 IEEE J. Quantum Electron. 46 1158
[16]	Xu Q, Fattal D and Beausoleil R G 2008 Opt. Express 16 4309
[17]	Xia F, Rooks M, Sekaric L and Vlasov Y 2007 Opt. Express 15 11934
[18]	FDTD Solutions 7.5 http://www.lumerical.com/fdtd.php
[19]	Coxeter H S M 1969 Introduction to Geometry (2nd ed.) (New York: Wiley) p. 115
[20]	Barwicz T, Popovic M, Watts M, Rakich P, Ippen E and Smith H 2006 J. Lightw. Technol. 24 2207

Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

Modeling and analysis of silicon-on-insulator elliptical microring resonators for future high-density integrated photonic circuits

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 20

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Impact of STI indium implantation on reliability of gate oxide[J]. 中国物理B, 2022, 31(2): 28505-028505.
[2]	Shuai Sun(孙帅), Wei Shi(史伟), Quan Sheng(盛泉), Shijie Fu(付士杰), Zhongbao Yan(闫忠宝), Shuai Zhang(张帅), Junxiang Zhang(张钧翔), Chaodu Shi(史朝督), Guizhong Zhang(张贵忠), and Jianquan Yao(姚建铨). Single-mode antiresonant terahertz fiber based on mode coupling between core and cladding[J]. 中国物理B, 2021, 30(12): 124205-124205.
[3]	黄乃兴, 孙恩伟, 张锐, 杨彬, 刘俭, 吕天全, 曹文武. Temperature dependence of mode coupling effect in piezoelectric vibrator made of [001]_c-poled Mn-doped 0.24PIN-0.46PMN-0.30PT ternary single crystals with high electromechanical coupling factor[J]. 中国物理B, 2020, 29(7): 75201-075201.
[4]	刘先程, 马佳俊, 谢红云, 马佩, 陈亮, 郭敏, 张万荣. Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor[J]. 中国物理B, 2020, 29(2): 28501-028501.
[5]	肖瑶, 李整林, 李鋆, 刘佳琪, Karim G Sabra. Influence of warm eddies on sound propagation in the Gulf of Mexico[J]. 中国物理B, 2019, 28(5): 54301-054301.
[6]	戴丽华, 毕大炜, 胡志远, 刘小年, 张梦映, 张正选, 邹世昌. Research on the radiation hardened SOI devices with single-step Si ion implantation[J]. 中国物理B, 2018, 27(4): 48503-048503.
[7]	张梦映, 胡志远, 毕大炜, 戴丽华, 张正选. Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation[J]. 中国物理B, 2018, 27(2): 28501-028501.
[8]	解鑫, 毕大伟, 胡志远, 朱慧龙, 张梦映, 张正选, 邹世昌. Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET[J]. 中国物理B, 2018, 27(12): 128501-128501.
[9]	郑齐文, 崔江维, 刘梦新, 苏丹丹, 周航, 马腾, 余学峰, 陆妩, 郭旗, 赵发展. Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin[J]. 中国物理B, 2017, 26(9): 96103-096103.
[10]	樊双, 胡志远, 张正选, 宁冰旭, 毕大炜, 戴丽华, 张梦映, 张乐情. Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs[J]. 中国物理B, 2017, 26(3): 36103-036103.
[11]	闫平, 王雪娇, 黄昱升, 付晨, 孙骏逸, 肖起榕, 李丹, 巩马理. Fiber core mode leakage induced by refractive index variation in high-power fiber laser[J]. 中国物理B, 2017, 26(3): 34205-034205.
[12]	李威, 郑直, 汪志刚, 李平, 付晓君, 何峥嵘, 刘凡, 杨丰, 向凡, 刘伦才. A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer[J]. 中国物理B, 2017, 26(1): 17701-017701.
[13]	解冰清, 李博, 毕津顺, 卜建辉, 吴驰, 李彬鸿, 韩郑生, 罗家俊. Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices[J]. 中国物理B, 2016, 25(7): 78501-078501.
[14]	黄鹏程, 陈书明, 陈建军. Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology[J]. 中国物理B, 2016, 25(3): 36103-036103.
[15]	王裕如, 刘祎鹤, 林兆江, 方冬, 李成州, 乔明, 张波. Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance[J]. 中国物理B, 2016, 25(2): 27305-027305.