中国物理B ›› 2012, Vol. 21 ›› Issue (5): 58101-058101.doi: 10.1088/1674-1056/21/5/058101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Growth and annealing study of hydrogen-doped single diamond crystals under high pressure and high temperature

李勇,贾晓鹏,胡美华,刘晓兵,颜丙敏,周振翔,张壮飞,马红安   

  1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • 收稿日期:2011-09-07 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172089) and the Program for New Century Excellent Talents in University of China.

Growth and annealing study of hydrogen-doped single diamond crystals under high pressure and high temperature

Li Yong(李勇), Jia Xiao-Peng(贾晓鹏), Hu Mei-Hua(胡美华), Liu Xiao-Bing(刘晓兵), Yan Bing-Min(颜丙敏), Zhou Zhen-Xiang(周振翔), Zhang Zhuang-Fei(张壮飞), and Ma Hong-An(马红安)†   

  1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China
  • Received:2011-09-07 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172089) and the Program for New Century Excellent Talents in University of China.

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摘要： A series of diamond crystals doped with hydrogen is successfully synthesized using LiH as the hydrogen source in a catalyst-carbon system at a pressure of 6.0 GPa and temperature ranging from 1255℃ to 1350℃. It is shown that the high temperature plays a key role in the incorporation of hydrogen atoms during diamond crystallization. Fourier transform infrared micro-spectroscopy reveals that most of the hydrogen atoms in the synthesized diamond are incorporated into the crystal structure as sp3--CH2-symmetric (2850 cm-1) and sp3 CH2-antisymmetric vibrations (2920 cm-1). The intensities of these peaks increase gradually with an increase in the content of the hydrogen source in the catalyst. The incorporation of hydrogen impurity leads to a significant shift towards higher frequencies of the Raman peak from 1332.06 cm-1 to 1333.05 cm-1 and gives rise to some compressive stress in the diamond crystal lattice. Furthermore, hydrogen to carbon bonds are evident in the annealed diamond, indicating that the bonds that remain throughout the annealing process and the vibration frequencies centred at 2850 and 2920 cm-1 have no observable shift. Therefore, we suggest that the sp3 C--H bond is rather stable in diamond crystals.

关键词: high pressure and high temperature, hydrogen-doped diamond crystals, annealing, LiH additives

Abstract: A series of diamond crystals doped with hydrogen is successfully synthesized using LiH as the hydrogen source in a catalyst-carbon system at a pressure of 6.0 GPa and temperature ranging from 1255℃ to 1350℃. It is shown that the high temperature plays a key role in the incorporation of hydrogen atoms during diamond crystallization. Fourier transform infrared micro-spectroscopy reveals that most of the hydrogen atoms in the synthesized diamond are incorporated into the crystal structure as sp3--CH2-symmetric (2850 cm-1) and sp3 CH2-antisymmetric vibrations (2920 cm-1). The intensities of these peaks increase gradually with an increase in the content of the hydrogen source in the catalyst. The incorporation of hydrogen impurity leads to a significant shift towards higher frequencies of the Raman peak from 1332.06 cm-1 to 1333.05 cm-1 and gives rise to some compressive stress in the diamond crystal lattice. Furthermore, hydrogen to carbon bonds are evident in the annealed diamond, indicating that the bonds that remain throughout the annealing process and the vibration frequencies centred at 2850 and 2920 cm-1 have no observable shift. Therefore, we suggest that the sp3 C--H bond is rather stable in diamond crystals.

Key words: high pressure and high temperature, hydrogen-doped diamond crystals, annealing, LiH additives

中图分类号:  (Diamond)

  • 81.05.ug
61.72.U- (Doping and impurity implantation) 81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)