中国物理B ›› 2012, Vol. 21 ›› Issue (5): 57801-057801.doi: 10.1088/1674-1056/21/5/057801

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Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO3(110) substrates

白洪亮,刘国磊,贺树敏,颜世申,朱大鹏,郭红雨,冀子武,杨丰帆,陈延学,梅良模   

  1. School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 收稿日期:2011-12-21 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2009CB929202) and the National Natural Science Foundation of China (Grant Nos. 10834001 and 51125004).

Growth and photoluminescence properties of inclined ZnO and ZnCoO thin films on SrTiO3(110) substrates

Bai Hong-Liang(白洪亮), Liu Guo-Lei(刘国磊)†, He Shu-Min(贺树敏), Yan Shi-Shen(颜世申), Zhu Da-Peng(朱大鹏), Guo Hong-Yu(郭红雨), Ji Zi-Wu(冀子武), Yang Feng-Fan(杨丰帆), Chen Yan-Xue(陈延学), and Mei Liang-Mo(梅良模)   

  1. School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2011-12-21 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2009CB929202) and the National Natural Science Foundation of China (Grant Nos. 10834001 and 51125004).

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摘要： ZnO thin film growth prefers different orientations on the etched and unetched SrTiO3(STO)(110) substrates. Inclined ZnO and cobalt-doped ZnO (ZnCoO) thin films are grown on unetched STO(110) substrates using oxygen plasma assisted molecular beam epitaxy, with the c-axis 42° inclined from the normal STO(110) surface. The growth geometries are ZnCoO[100]//STO[110] and ZnCoO[111]//STO[001]. The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D0X emissions associated with A0X emissions, and the characteristic emissions for the 2E(2G)→4A2(4F) transition of Co2+ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film, indicating the incorporation of Co2+ ions at the lattice positions of the Zn2+ ions. The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature.

关键词: inclined ZnO, SrTiO3(110), photoluminescence

Abstract: ZnO thin film growth prefers different orientations on the etched and unetched SrTiO3(STO)(110) substrates. Inclined ZnO and cobalt-doped ZnO (ZnCoO) thin films are grown on unetched STO(110) substrates using oxygen plasma assisted molecular beam epitaxy, with the c-axis 42° inclined from the normal STO(110) surface. The growth geometries are ZnCoO[100]//STO[1$\bar{1}$0] and ZnCoO[1$\bar{1}$1]//STO[001]. The low temperature photoluminescence spectra of the inclined ZnO and ZnCoO films are dominated by D0X emissions associated with A0X emissions, and the characteristic emissions for the 2E(2G)→4A2(4F) transition of Co2+ dopants and the relevant phonon-participated emissions are observed in the ZnCoO film, indicating the incorporation of Co2+ ions at the lattice positions of the Zn2+ ions. The c-axis inclined ZnCoO film shows ferromagnetic properties at room temperature.

Key words: inclined ZnO, SrTiO3(110), photoluminescence

中图分类号:  (Photoluminescence, properties and materials)

  • 78.55.-m
81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 81.20.-n (Methods of materials synthesis and materials processing)