Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

doi:10.1088/1674-1056/21/4/046103

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 46103-046103.doi: 10.1088/1674-1056/21/4/046103

周勋¹ ²,罗子江¹ ³,郭祥¹,张毕禅¹,尚林涛¹,周清¹,邓朝勇¹,丁召¹

收稿日期:2011-07-30 修回日期:2011-10-04 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 丁召,zding@gzu.edu.cn E-mail:zding@gzu.edu.cn

Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

Zhou Xun(周勋)^a)b), Luo Zi-Jiang(罗子江)^a)c), Guo Xiang(郭祥)^a), Zhang Bi-Chan(张毕禅)^a), Shang Lin-Tao(尚林涛)^a), Zhou Qing(周清)^a), Deng Chao-Yong(邓朝勇)^a), and Ding Zhao(丁召)^a)^†

a. College of Science, Guizhou University, Guiyang 550025, China;
b. School of Physics and Electronics Science, Guizhou Normal University, Guiyang 550001, China;
c. School of Education Administration, Guizhou College of Finance and Economics, Guiyang 550004, China

Received:2011-07-30 Revised:2011-10-04 Online:2012-02-29 Published:2012-02-29
Contact: Ding Zhao,zding@gzu.edu.cn E-mail:zding@gzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60866001), the Special Assistant to High- Level Personnel Research Projects of Guizhou Provincial Party Committee Organization Department of China (Grant No. TZJF- 2008-31), the Support Plan of New Century Excellent Talents of Ministry of Education, China (Grant No. NCET-08-0651), the Doctorate Foundation of the State Education Ministry of China (Grant No. 20105201110003), the Special Governor Fund of Outstanding Professionals in Science and Technology and Education of Guizhou Province, China (Grant No. 2009114), the Doctoral Foundation Projects of Guizhou College of Finance and Economics in 2010.

摘要/Abstract

Abstract: Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As₄ BEP for InGaAs films. When the As₄ BEP is set to be zero, the RHEED pattern keeps a 4×3/(n×3) structure with increasing temperature, and surface segregation takes place until 470 ℃. The RHEED pattern develops into a metal-rich (4×2) structure as temperature increases to 495 ℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 ℃, the RHEED pattern turns into a GaAs(2×4) structure due to In desorption. While the As₄ BEP comes up to a specific value (1.33×10^-4 Pa-1.33×10^-3 Pa), the surface temperature can delay the segregation and desorption. We find that As₄ BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.

Key words: reflection high-energy electron diffraction, InGaAs films, surface segregation, surface desorption

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

周勋, 罗子江, 郭祥, 张毕禅, 尚林涛, 周清, 邓朝勇, 丁召. [J]. 中国物理B, 2012, 21(4): 46103-046103.

Zhou Xun(周勋), Luo Zi-Jiang(罗子江), Guo Xiang(郭祥), Zhang Bi-Chan(张毕禅), Shang Lin-Tao(尚林涛), Zhou Qing(周清), Deng Chao-Yong(邓朝勇), and Ding Zhao(丁召) . Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns[J]. Chin. Phys. B, 2012, 21(4): 46103-046103.

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Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

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