Influence of Boron doping on microcrystalline silicon growth

doi:10.1088/1674-1056/20/9/096801

中国物理B ›› 2011, Vol. 20 ›› Issue (9): 96801-096801.doi: 10.1088/1674-1056/20/9/096801

Influence of Boron doping on microcrystalline silicon growth

李新利, 陈永生, 杨仕娥, 谷锦华, 卢景霄, 郜小勇, 李瑞, 焦岳超, 高海波, 王果

The Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China

收稿日期:2010-12-28 修回日期:2011-05-18 出版日期:2011-09-15 发布日期:2011-09-15
基金资助:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CB201606) and the National Natural Science Foundation of China (Grant No. 51007082).

Influence of Boron doping on microcrystalline silicon growth

Li Xin-Li(李新利)^a), Chen Yong-Sheng(陈永生)^a), Yang Shi-E(杨仕娥)^a), Gu Jin-Hua(谷锦华)^a), Lu Jing-Xiao(卢景霄)^a)†, Gao Xiao-Yong(郜小勇)^a), Li Rui(李瑞)^a)b),Jiao Yue-Chao(焦岳超)^a), Gao Hai-Bo(高海波)^a), and Wang Guo(王果)^a)

^aThe Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China; ^b Henan University of Technology, Zhengzhou 450051, China

Received:2010-12-28 Revised:2011-05-18 Online:2011-09-15 Published:2011-09-15
Supported by:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CB201606) and the National Natural Science Foundation of China (Grant No. 51007082).

摘要/Abstract

摘要： Microcrystalline silicon (μc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent α are about 0.369 and 0.95 for the undoped thin film, respectively. Whereas, for the boron-doped μc-Si:H thin film, β increases to 0.534 and α decreases to 0.46 due to the shadowing effect.

关键词: microcrystalline silicon thin film, surface roughness, shadowing effect

Abstract: Microcrystalline silicon (μc-Si:H) thin films with and without boron doping are deposited using the radio-frequency plasma-enhanced chemical vapour deposition method. The surface roughness evolutions of the silicon thin films are investigated using ex situ spectroscopic ellipsometry and an atomic force microscope. It is shown that the growth exponent β and the roughness exponent α are about 0.369 and 0.95 for the undoped thin film, respectively. Whereas, for the boron-doped μc-Si:H thin film, β increases to 0.534 and $\alpha$ decreases to 0.46 due to the shadowing effect.

Key words: microcrystalline silicon thin film, surface roughness, shadowing effect

中图分类号: (Semiconductors)

68.55.ag

68.55.jm (Texture) 68.37.Ps (Atomic force microscopy (AFM))

李新利, 陈永生, 杨仕娥, 谷锦华, 卢景霄, 郜小勇, 李瑞, 焦岳超, 高海波, 王果. Influence of Boron doping on microcrystalline silicon growth[J]. 中国物理B, 2011, 20(9): 96801-096801.

Li Xin-Li(李新利), Chen Yong-Sheng(陈永生), Yang Shi-E(杨仕娥), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), Gao Xiao-Yong(郜小勇), Li Rui(李瑞), Jiao Yue-Chao(焦岳超), Gao Hai-Bo(高海波), and Wang Guo(王果) . Influence of Boron doping on microcrystalline silicon growth[J]. Chin. Phys. B, 2011, 20(9): 96801-096801.

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Influence of Boron doping on microcrystalline silicon growth

Influence of Boron doping on microcrystalline silicon growth

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