中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87307-087307.doi: 10.1088/1674-1056/20/8/087307

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Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study

毕志伟1, 毛维1, 郝跃1, 冯倩1, 高志远1, 张进成1, 马晓华1, 常永明1, 李志明1, 梅楠1, 曹艳荣2, 胡振华3   

  1. (1)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; School of Electronical & Machanical Engineering, Xidian University, Xi’an 710071, China; (3)Life Sciences Research Centre, School of Life Sciences and Technology, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-01-04 修回日期:2011-03-09 出版日期:2011-08-15 发布日期:2011-08-15
  • 基金资助:
    Project supported by the State Key Program and Major Program of the National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191) and the Fundamental Research Funds for the Central Universities (Grant Nos. JY10000925002 and JY10000904009).

Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study

Bi Zhi-Wei(毕志伟)a)† , Hu Zhen-Hua(胡振华) b), Mao Wei(毛维)a), Hao Yue(郝跃)a)‡, Feng Qian(冯倩) a), Cao Yan-Rong(曹艳荣)a)c), Gao Zhi-Yuan(高志远)a), Zhang Jin-Cheng(张进成)a), Ma Xiao-Hua(马晓华)a), Chang Yong-Ming(常永明)a), Li Zhi-Ming(李志明) a), and Mei Nan(梅楠)a)   

  1. a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; b Life Sciences Research Centre, School of Life Sciences and Technology, Xidian University, Xi'an 710071, China; c School of Electronical & Machanical Engineering, Xidian University, Xi’an 710071, China
  • Received:2011-01-04 Revised:2011-03-09 Online:2011-08-15 Published:2011-08-15
  • Supported by:
    Project supported by the State Key Program and Major Program of the National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191) and the Fundamental Research Funds for the Central Universities (Grant Nos. JY10000925002 and JY10000904009).

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摘要： This paper studies the drain current collapse of AlGaN/GaN metal—insulator—semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbAlO MIS-HEMT, smaller current collapse is found, especially when the gate static voltage is -8 V. Through a thorough study of the gate—drain conductance dispersion, it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively, and weaken the current collapse effect accordingly.

关键词: metal—insulator—semiconductor high electron-mobility transistor, GaN, current collapse, passivation

Abstract: This paper studies the drain current collapse of AlGaN/GaN metal—insulator—semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device. For NbAlO MIS-HEMT, smaller current collapse is found, especially when the gate static voltage is -8 V. Through a thorough study of the gate—drain conductance dispersion, it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface. Therefore, fewer traps can be filled by gate electrons, and hence the depletion effect in the channel is suppressed effectively. It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively, and weaken the current collapse effect accordingly.

Key words: metal—insulator—semiconductor high electron-mobility transistor, GaN, current collapse, passivation

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.Tv (Field effect devices) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))