Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study
毕志伟, 胡振华, 毛维, 郝跃, 冯倩, 曹艳荣, 高志远, 张进成, 马晓华, 常永明, 李志明, 梅楠
Investigation of passivation effects in AlGaN/GaN metal–insulator–semiconductor high electron-mobility transistor by gate–drain conductance dispersion study
Bi Zhi-Wei(毕志伟), Hu Zhen-Hua(胡振华), Mao Wei(毛维), Hao Yue(郝跃), Feng Qian(冯倩), Cao Yan-Rong(曹艳荣), Gao Zhi-Yuan(高志远), Zhang Jin-Cheng(张进成), Ma Xiao-Hua(马晓华), Chang Yong-Ming(常永明), Li Zhi-Ming(李志明), and Mei Nan(梅楠)
中国物理B
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2011, (8): 87307
-087307
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DOI: 10.1088/1674-1056/20/8/087307