中国物理B ›› 2011, Vol. 20 ›› Issue (8): 87306-087306.doi: 10.1088/1674-1056/20/8/087306

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Top contact organic field effect transistors fabricated using a photolithographic process

彭应全1, 王宏2, 姬濯宇3, 商立伟3, 刘兴华3, 刘明3   

  1. (1)Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; (2)Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijin; (3)Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2010-10-25 修回日期:2011-03-08 出版日期:2011-08-15 发布日期:2011-08-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703) and the National Natural Science Foundation of China (Grant Nos. 10974074, 90607022, 60676001, 60676008, and 60825403).

Top contact organic field effect transistors fabricated using a photolithographic process

Wang Hong(王宏)a)b),Ji Zhuo-Yu(姬濯宇)b), Shang Li-Wei(商立伟)b), Liu Xing-Hua(刘兴华)b),Peng Ying-Quan(彭应全)a)†,and Liu Ming(刘明)b)   

  1. a Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; b Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2010-10-25 Revised:2011-03-08 Online:2011-08-15 Published:2011-08-15
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703) and the National Natural Science Foundation of China (Grant Nos. 10974074, 90607022, 60676001, 60676008, and 60825403).

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摘要： This paper proposes an effective method of fabricating top contact organic field effect transistors by using a photolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated successfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.

关键词: organic field effect transistors, top contact, photolithographic

Abstract: This paper proposes an effective method of fabricating top contact organic field effect transistors by using a photolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated successfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.

Key words: organic field effect transistors, top contact, photolithographic

中图分类号:  (Contact resistance, contact potential)

  • 73.40.Cg
73.61.Ph (Polymers; organic compounds) 85.30.Tv (Field effect devices) 85.65.+h (Molecular electronic devices)