Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

doi:10.1088/1674-1056/20/5/057201

中国物理B ›› 2011, Vol. 20 ›› Issue (5): 57201-057201.doi: 10.1088/1674-1056/20/5/057201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

张安, 赵小如, 段利兵, 刘金铭, 赵建林

Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Science, Northwestern Polytechnical University, Xi'an 710072, China

收稿日期:2010-11-15 修回日期:2011-01-04 出版日期:2011-05-15 发布日期:2011-05-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 50872112) and NPU Foundation for Fundamental Research, China (Grant No. JC201017).

Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

Zhang An(张安), Zhao Xiao-Ru(赵小如)^†, Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林)

Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Science, Northwestern Polytechnical University, Xi'an 710072, China

Received:2010-11-15 Revised:2011-01-04 Online:2011-05-15 Published:2011-05-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 50872112) and NPU Foundation for Fundamental Research, China (Grant No. JC201017).

摘要/Abstract

摘要： The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si) TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.

Abstract: The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si) TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.

Key words: grain boundary, ZnO thin film transistors, trap states, simulation

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 85.30.Tv (Field effect devices)

张安, 赵小如, 段利兵, 刘金铭, 赵建林. Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position[J]. 中国物理B, 2011, 20(5): 57201-057201.

Zhang An(张安), Zhao Xiao-Ru(赵小如), Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林). Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position[J]. Chin. Phys. B, 2011, 20(5): 57201-057201.

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Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

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