Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

doi:10.1088/1674-1056/20/1/017203

中国物理B ›› 2011, Vol. 20 ›› Issue (1): 17203-017203.doi: 10.1088/1674-1056/20/1/017203

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Development and characteristic analysis of a field-plated Al₂O₃/AlInN/GaN MOS–HEMT

毛维¹, 郝跃¹, 张进成¹, 刘红侠¹, 毕志伟¹, 许晟瑞¹, 薛军帅¹, 马晓华¹, 王冲¹, 杨林安¹, 张金风¹, 匡贤伟¹, 杨翠²

(1)Key Lab of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; (2)School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2010-09-04 修回日期:2010-09-25 出版日期:2011-01-15 发布日期:2011-01-15
基金资助:
Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000925002), the National Key Science and Technology Special Project (Grant No. 2008ZX01002-002), the National Natural Science Foundation of China (Grant Nos. 60736033, 60976068 and 61076097), New Teacher Foundation for Doctoral Program of Ministry of Education of China (Grant No. 200807011012).

Development and characteristic analysis of a field-plated Al₂O₃/AlInN/GaN MOS–HEMT

Mao Wei(毛维)^a)†, Yang Cui(杨翠)^b), Hao Yao(郝跃)^a), Zhang Jin-Cheng(张进成)^a), Liu Hong-Xia(刘红侠)^a), Bi Zhi-Wei(毕志伟)^a), Xu Sheng-Rui(许晟瑞)^a), Xue Jun-Shuai(薛军帅)^a), Ma Xiao-Hua(马晓华)^a), Wang Chong(王冲)^a), Yang Lin-An(杨林安)^a), Zhang Jin-Feng(张金风)^a), and Kuang Xian-Wei(匡贤伟)^a)

^a Key Lab of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China; ^b School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2010-09-04 Revised:2010-09-25 Online:2011-01-15 Published:2011-01-15
Supported by:
Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000925002), the National Key Science and Technology Special Project (Grant No. 2008ZX01002-002), the National Natural Science Foundation of China (Grant Nos. 60736033, 60976068 and 61076097), New Teacher Foundation for Doctoral Program of Ministry of Education of China (Grant No. 200807011012).

摘要/Abstract

摘要： We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.

Abstract: We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS–HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS–HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS–HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance–voltage (C–V) curve of the FP-MOS–HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS–HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS–HEMT to deliver high currents and power densities in high power microwave technologies.

Key words: field-plate, ultra-thin Al₂O₃ gate dielectric, FP-MOS–HEMT, atomic layer deposited

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

毛维, 杨翠, 郝跃, 张进成, 刘红侠, 毕志伟, 许晟瑞, 薛军帅, 马晓华, 王冲, 杨林安, 张金风, 匡贤伟. Development and characteristic analysis of a field-plated Al₂O₃/AlInN/GaN MOS–HEMT[J]. 中国物理B, 2011, 20(1): 17203-017203.

Mao Wei(毛维), Yang Cui(杨翠), Hao Yao(郝跃), Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Wang Chong(王冲), Yang Lin-An(杨林安), Zhang Jin-Feng(张金风), and Kuang Xian-Wei(匡贤伟). Development and characteristic analysis of a field-plated Al₂O₃/AlInN/GaN MOS–HEMT[J]. Chin. Phys. B, 2011, 20(1): 17203-017203.

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Development and characteristic analysis of a field-plated Al₂O₃/AlInN/GaN MOS–HEMT

Development and characteristic analysis of a field-plated Al₂O₃/AlInN/GaN MOS–HEMT

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