Development and characteristic analysis of a field-plated Al
2O
3/AlInN/GaN MOS–HEMT
毛维, 杨翠, 郝跃, 张进成, 刘红侠, 毕志伟, 许晟瑞, 薛军帅, 马晓华, 王冲, 杨林安, 张金风, 匡贤伟
Development and characteristic analysis of a field-plated Al
2O
3/AlInN/GaN MOS–HEMT
Mao Wei(毛维), Yang Cui(杨翠), Hao Yao(郝跃), Zhang Jin-Cheng(张进成), Liu Hong-Xia(刘红侠), Bi Zhi-Wei(毕志伟), Xu Sheng-Rui(许晟瑞), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Wang Chong(王冲), Yang Lin-An(杨林安), Zhang Jin-Feng(张金风), and Kuang Xian-Wei(匡贤伟)
中国物理B
.
2011, (1): 17203
-017203
.
DOI: 10.1088/1674-1056/20/1/017203