Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

doi:10.1088/1674-1056/19/8/087201

中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87201-087201.doi: 10.1088/1674-1056/19/8/087201

Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

庞斐, 梁学锦, 廖昭亮, 尹树力, 陈东敏

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2010-05-16 修回日期:2010-05-26 出版日期:2010-08-15 发布日期:2010-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10874217 and 10427402) and the National Basic Research Program of China (973 Program) (Grant No. 2006CB933000).

Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

Pang Fei(庞斐), Liang Xue-Jin(梁学锦)^†, Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏)^‡

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2010-05-16 Revised:2010-05-26 Online:2010-08-15 Published:2010-08-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 10874217 and 10427402) and the National Basic Research Program of China (973 Program) (Grant No. 2006CB933000).

摘要/Abstract

摘要： Transport characteristics of single crystal bismuth films on Si(111)-7×7 are found to be metallic or insulating at temperatures below or above T_C, respectively. The transition temperature T_C decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than T_C.

Abstract: Transport characteristics of single crystal bismuth films on Si(111)-7×7 are found to be metallic or insulating at temperatures below or above T_C, respectively. The transition temperature T_C decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than T_C.

Key words: bismuth film, interface states, Rashba spin-splitting, semimetal-to-semiconductor transition

中图分类号: (Metal-insulator transitions and other electronic transitions)

71.30.+h

68.35.B- (Structure of clean surfaces (and surface reconstruction)) 68.55.-a (Thin film structure and morphology) 68.55.A- (Nucleation and growth) 73.50.Mx (High-frequency effects; plasma effects) 73.61.-r (Electrical properties of specific thin films)

庞斐, 梁学锦, 廖昭亮, 尹树力, 陈东敏. Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)[J]. 中国物理B, 2010, 19(8): 87201-087201.

Pang Fei(庞斐), Liang Xue-Jin(梁学锦), Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏). Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)[J]. Chin. Phys. B, 2010, 19(8): 87201-087201.

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Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)

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