中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87202-087202.doi: 10.1088/1674-1056/19/8/087202
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
宋庆文, 张玉明, 张义门, 张倩, 吕红亮
Song Qing-Wen(宋庆文)†, Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮)
摘要: This paper proposes a double epi-layers 4H–SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (Ron,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H–SiC JBSR.
中图分类号: (Power electronics; power supply circuits)