中国物理B ›› 2010, Vol. 19 ›› Issue (8): 87202-087202.doi: 10.1088/1674-1056/19/8/087202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

宋庆文, 张玉明, 张义门, 张倩, 吕红亮   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2009-10-19 修回日期:2010-03-03 出版日期:2010-08-15 发布日期:2010-08-15
  • 基金资助:
    Project supported by the 13115 Innovation Engineering of Shaanxi Province of China (Grant No. 2008ZDKG-30).

Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

Song Qing-Wen(宋庆文)†, Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮)   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2009-10-19 Revised:2010-03-03 Online:2010-08-15 Published:2010-08-15
  • Supported by:
    Project supported by the 13115 Innovation Engineering of Shaanxi Province of China (Grant No. 2008ZDKG-30).

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摘要： This paper proposes a double epi-layers 4H–SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (Ron,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H–SiC JBSR.

Abstract: This paper proposes a double epi-layers 4H–SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (Ron,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H–SiC JBSR.

Key words: junction barrier Schottky rectifier, 4H–SiC, breakdown voltage, specific on-resistance

中图分类号:  (Power electronics; power supply circuits)

  • 84.30.Jc
61.72.S- (Impurities in crystals) 68.55.-a (Thin film structure and morphology) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables) 85.30.De (Semiconductor-device characterization, design, and modeling)