中国物理B ›› 2010, Vol. 19 ›› Issue (7): 77801-077801.doi: 10.1088/1674-1056/19/7/077801

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Ultraviolet laser-induced photovoltaic effects in miscut ferroelectric LiNbO3 single crystals

王芳1, 赵嵩卿2, 李小明3, 赵昆4   

  1. (1)Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, China; (2)Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, China;International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China; (3)State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, China;Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, China; (4)State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, China;Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, China;International Center for Materials Physics, Chine
  • 出版日期:2010-07-15 发布日期:2010-07-15
  • 基金资助:
    Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0841), the National Natural Science Foundation of China (Grant Nos. 60778034 and 60877038), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200804250006), and Beijng Natural Science Foundation (Grant No. 4082026).

Ultraviolet laser-induced photovoltaic effects in miscut ferroelectric LiNbO3 single crystals

Li Xiao-Ming(李小明)a)b), Wang Fang(王芳) b), Zhao Kun(赵昆)a)b)c)† , and Zhao Song-Qing(赵嵩卿)b)c)   

  1. a State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249, China; b Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, China; c International Center for Materials Physics, ChineInternational Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China
  • Online:2010-07-15 Published:2010-07-15
  • Supported by:
    Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-08-0841), the National Natural Science Foundation of China (Grant Nos. 60778034 and 60877038), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200804250006), and Beijng Natural Science Foundation (Grant No. 4082026).

摘要: This paper investigates the photovoltaic properties of miscut LiNbO3 single crystal with different thicknesses under irradiation of a 248 nm ultraviolet laser pulse with 20 ns duration without an applied bias. Nanosecond photovoltaic response is observed and faster rise time is obtained in thinner samples. In accord with the 248 nm laser duration, the full width at half maximum of the photovoltaic signals keeps a constant of ~20 ns. With decrease of the crystal thickness, the photovoltaic sensitivity was improved rapidly at first and then decreased, and the maximum photovoltage occurred at 0.38 mm-thick single crystal. The present results demonstrate that decreasing the LiNbO3 single crystal thickness can obtain faster response time and improve the photovoltaic sensitivity.

Abstract: This paper investigates the photovoltaic properties of miscut LiNbO3 single crystal with different thicknesses under irradiation of a 248 nm ultraviolet laser pulse with 20 ns duration without an applied bias. Nanosecond photovoltaic response is observed and faster rise time is obtained in thinner samples. In accord with the 248 nm laser duration, the full width at half maximum of the photovoltaic signals keeps a constant of ~20 ns. With decrease of the crystal thickness, the photovoltaic sensitivity was improved rapidly at first and then decreased, and the maximum photovoltage occurred at 0.38 mm-thick single crystal. The present results demonstrate that decreasing the LiNbO3 single crystal thickness can obtain faster response time and improve the photovoltaic sensitivity.

Key words: photovoltaic effect, LiNbO3 single crystal, photodetector

中图分类号:  (Photoconduction and photovoltaic effects)

  • 72.40.+w
61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 61.82.Ms (Insulators)