中国物理B ›› 2010, Vol. 19 ›› Issue (8): 84302-084302.doi: 10.1088/1674-1056/19/8/084302

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Quantitative measurement of local elasticity of SiOx film by atomic force acoustic microscopy

何存富, 张改梅, 吴斌   

  1. College of Mechanical Engineering & Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2009-08-05 修回日期:2010-01-24 出版日期:2010-08-15 发布日期:2010-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 50775005).

Quantitative measurement of local elasticity of SiOx film by atomic force acoustic microscopy

He Cun-Fu(何存富)†, Zhang Gai-Mei(张改梅), and Wu Bin(吴斌)   

  1. College of Mechanical Engineering & Applied Electronics Technology, Beijing University of Technology, Beijing 100124, China
  • Received:2009-08-05 Revised:2010-01-24 Online:2010-08-15 Published:2010-08-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 50775005).

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摘要： In this paper the elastic properties of SiOx film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy (AFAM) in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiOx films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition (PECVD). The local contact stiffness of the tip-SiOx film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiOx film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiOx surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample.

Abstract: In this paper the elastic properties of SiOx film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy (AFAM) in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiOx films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition (PECVD). The local contact stiffness of the tip-SiOx film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiOx film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiOx surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample.

Key words: atomic force acoustic microscopy, SiOx film, contact resonance frequency, local elasticity

中图分类号:  (Mechanical and acoustical properties)

  • 68.60.Bs
52.77.Dq (Plasma-based ion implantation and deposition) 62.20.D- (Elasticity) 68.37.Ps (Atomic force microscopy (AFM)) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.40.Jj (Elasticity and anelasticity, stress-strain relations)