中国物理B ›› 2009, Vol. 18 ›› Issue (4): 1594-1597.doi: 10.1088/1674-1056/18/4/050

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The research on suspended ZnO nanowire field-effect transistor

郭常新1, 黎明2, 张海英2, 徐静波2, 付晓君2   

  1. (1)Department of Physics, University of Science and Technology of China, Hefei 230026, China; (2)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2008-09-26 修回日期:2008-10-13 出版日期:2009-04-20 发布日期:2009-04-20

The research on suspended ZnO nanowire field-effect transistor

Li Ming(黎明)a), Zhang Hai-Ying(张海英)a), Guo Chang-Xin(郭常新)b), Xu Jing-Bo(徐静波)a), and Fu Xiao-Jun(付晓君)a)   

  1. a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:2008-09-26 Revised:2008-10-13 Online:2009-04-20 Published:2009-04-20

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摘要： This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～105. When VDS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage VTH was about 0.6 V, the electron mobility was on average 50.17 cm2/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 102Ω cm at VGS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.

关键词: ZnO nanowire, back-gate, suspended, field-effect transistor

Abstract: This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by $I$--$V$  measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs  showed a p-channel depletion mode, exhibited high on--off current ratio of $\sim$10$^{5}$. When $V_{\rm DS}=2.5$ V, the peak transconductances of the suspended FETs were 0.396 $\mu $S, the oxide capacitance was found to be  1.547 fF, the pinch-off voltage $V_{\rm TH}$ was about 0.6 V, the electron mobility was on average 50.17 cm$^{2}$/Vs. The resistivity of the ZnO nanowire channel was estimated to be $0.96\times 10^{2}~\Omega $ cm at  $V_{\rm GS} = 0$ V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.

Key words: ZnO nanowire, back-gate, suspended, field-effect transistor

中图分类号:  (Field effect devices)

  • 85.30.Tv
81.16.Nd (Micro- and nanolithography) 73.63.Nm (Quantum wires) 81.07.Vb (Quantum wires)