Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

doi:10.1088/1674-1056/17/4/043

中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1410-1414.doi: 10.1088/1674-1056/17/4/043

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

车勇¹, 吕红亮², 张义门², 张玉明²

(1)Engineering College of Armed Police Force, Xi'an 710086, China; (2)Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi'an 710071, China

收稿日期:2007-06-24 修回日期:2007-11-05 出版日期:2008-04-20 发布日期:2008-04-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No 60606022) the State Key Development Program for Basic Research of China (Grant No 51327010101) and Xi'an Applied Materials Innovation Fund, China (Grant No XA-AM-200702).

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

Lü Hong-Liang(吕红亮)^a), Zhang Yi-Men(张义门)^a), Zhang Yu-Ming(张玉明)^a), and Che Yong(车勇)^b)

^a Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Xidian University, Xi'an 710071, China; ^b Engineering College of Armed Police Force, Xi'an 710086, China

Received:2007-06-24 Revised:2007-11-05 Online:2008-04-20 Published:2008-04-01
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No 60606022) the State Key Development Program for Basic Research of China (Grant No 51327010101) and Xi'an Applied Materials Innovation Fund, China (Grant No XA-AM-200702).

摘要/Abstract

摘要： A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region $I-V$ model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physical-based simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.

关键词: 4H-SiC, MESFET, self-heating, analytic model

Abstract: A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region $I-V$ model. The static current characteristics of 4H-SiC MESFET have been obtained with the consideration of the self-heating effect on related parameters including electron mobility, saturation velocity and thermal conductivity. High voltage performances are analysed using equivalent thermal conductivity model. Using the physical-based simulations, we studied the dependence of self-heating temperature on the thickness and doping of substrate. The obtained results can be used for optimization of the thermal design of the SiC-based high-power field effect transistors.

Key words: 4H-SiC, MESFET, self-heating, analytic model

中图分类号: (Low-field transport and mobility; piezoresistance)

72.20.Fr

72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 73.40.Sx (Metal-semiconductor-metal structures) 85.30.Tv (Field effect devices)

吕红亮, 张义门, 张玉明, 车勇. Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs[J]. 中国物理B, 2008, 17(4): 1410-1414.

Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), and Che Yong(车勇) . Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs[J]. Chin. Phys. B, 2008, 17(4): 1410-1414.

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Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs

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