中国物理B ›› 2008, Vol. 17 ›› Issue (1): 323-327.doi: 10.1088/1674-1056/17/1/057

• • 上一篇    下一篇

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

黄社松1, 牛智川1, 倪海桥1, 赵欢1, 吴东海1, 孙征1, 詹锋2   

  1. (1)State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,\Chinese Academy of Sciences, Beijing 100083, China; (2)The Key Laboratory of Beam Technology and Material Modification of Ministry of Education,\Beijing Normal University, Beijing 100875, China
  • 出版日期:2008-01-20 发布日期:2008-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60625405), and the Special Foundation for State Major Basic Research Program of China (Grant No 2006CB921504).

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

Huang She-Song(黄社松)a)†, Niu Zhi-Chuan(牛智川)a), Zhan Feng(詹锋)b), Ni Hai-Qiao(倪海桥)a), Zhao Huan(赵欢)a), Wu Dong-Hai(吴东海)a), and Sun Zheng(孙征)a)   

  1. a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China
  • Online:2008-01-20 Published:2008-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60625405), and the Special Foundation for State Major Basic Research Program of China (Grant No 2006CB921504).

PDF (PC)

3031

赞

摘要： We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density ($\sim $5.9$\times $10$^{10}$\,cm$^{ - 2})$ good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7\,meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

关键词: molecular beam epitaxy, quantum dots, a modified two-step growth

Abstract: We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density ($\sim $5.9$\times $10$^{10}$ cm$^{ - 2})$ good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

Key words: molecular beam epitaxy, quantum dots, a modified two-step growth

中图分类号:  (Quantum dots (patterned in quantum wells))

  • 68.65.Hb
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 68.37.Ps (Atomic force microscopy (AFM)) 78.55.Cr (III-V semiconductors) 78.67.Hc (Quantum dots)