中国物理B ›› 2008, Vol. 17 ›› Issue (1): 323-327.doi: 10.1088/1674-1056/17/1/057

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High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

黄社松1, 牛智川1, 倪海桥1, 赵欢1, 吴东海1, 孙征1, 詹锋2   

  1. (1)State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,\Chinese Academy of Sciences, Beijing 100083, China; (2)The Key Laboratory of Beam Technology and Material Modification of Ministry of Education,\Beijing Normal University, Beijing 100875, China
  • 出版日期:2008-01-20 发布日期:2008-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60625405), and the Special Foundation for State Major Basic Research Program of China (Grant No 2006CB921504).

High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth

Huang She-Song(黄社松)a)†, Niu Zhi-Chuan(牛智川)a), Zhan Feng(詹锋)b), Ni Hai-Qiao(倪海桥)a), Zhao Huan(赵欢)a), Wu Dong-Hai(吴东海)a), and Sun Zheng(孙征)a)   

  1. a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b The Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, Beijing 100875, China
  • Online:2008-01-20 Published:2008-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60625405), and the Special Foundation for State Major Basic Research Program of China (Grant No 2006CB921504).

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摘要： We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density ($\sim $5.9$\times $10$^{10}$\,cm$^{ - 2})$ good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7\,meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

关键词: molecular beam epitaxy, quantum dots, a modified two-step growth

Abstract: We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. In the first step, high-density small InAs QDs are formed by optimizing the continuous deposition amount. In the second step, deposition is carried out with a long growth interruption for every 0.1 InAs monolayer. Atomic force microscope images show that the high-density ($\sim $5.9$\times $10$^{10}$ cm$^{ - 2})$ good size-uniformity InAs QDs are achieved. The strong intensity and narrow linewidth (27.7 meV) of the photoluminescence spectrum show that the QDs grown in this two-step method have a good optical quality.

Key words: molecular beam epitaxy, quantum dots, a modified two-step growth

中图分类号:  (Quantum dots (patterned in quantum wells))

  • 68.65.Hb
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 68.37.Ps (Atomic force microscopy (AFM)) 78.55.Cr (III-V semiconductors) 78.67.Hc (Quantum dots)