中国物理B ›› 2007, Vol. 16 ›› Issue (5): 1467-1471.doi: 10.1088/1009-1963/16/5/050

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates

刘喆, 王晓亮, 王军喜, 胡国新, 郭伦春, 李晋闽   

  1. Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2006-09-20 修回日期:2006-12-25 出版日期:2007-05-20 发布日期:2007-05-20
  • 基金资助:
    Project supported by the National Natural Foundation of China (Grant No~60136020), the Key Innovation Program of Chinese Academy of Sciences and the National High Technology Development Program of China (Grant No~2002AA305304).

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates

Liu Zhe(刘喆)† , Wang Xiao-Liang(王晓亮), Wang Jun-Xi(王军喜), Hu Guo-Xin(胡国新), Guo Lun-Chun(郭伦春), and Li Jin-Min(李晋闽)   

  1. Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2006-09-20 Revised:2006-12-25 Online:2007-05-20 Published:2007-05-20
  • Supported by:
    Project supported by the National Natural Foundation of China (Grant No~60136020), the Key Innovation Program of Chinese Academy of Sciences and the National High Technology Development Program of China (Grant No~2002AA305304).

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摘要： AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

Abstract: AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

Key words: GaN, Si substrate, metalorganic chemical vapour deposition, superlattice buffer

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.47.Fg (Semiconductor surfaces) 68.60.Bs (Mechanical and acoustical properties) 68.65.Cd (Superlattices) 78.30.Fs (III-V and II-VI semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))