The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
刘喆, 王晓亮, 王军喜, 胡国新, 郭伦春, 李晋闽
The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates
Liu Zhe(刘喆), Wang Xiao-Liang(王晓亮), Wang Jun-Xi(王军喜), Hu Guo-Xin(胡国新), Guo Lun-Chun(郭伦春), and Li Jin-Min(李晋闽)
中国物理B
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2007, (5): 1467
-1471
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DOI: 10.1088/1009-1963/16/5/050