Structural, optical, and electrical properties of Cu-doped ZrO2 films prepared by magnetron co-sputtering

doi:10.1088/1674-1056/26/10/106801

中国物理B ›› 2017, Vol. 26 ›› Issue (10): 106801-106801.doi: 10.1088/1674-1056/26/10/106801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Structural, optical, and electrical properties of Cu-doped ZrO₂ films prepared by magnetron co-sputtering

Nian-Qi Yao(姚念琦), Zhi-Chao Liu(刘智超), Guang-Rui Gu(顾广瑞), Bao-Jia Wu(吴宝嘉)

Department of Physics, College of Science, Yanbian University, Yanji 133002, China

收稿日期:2017-04-10 修回日期:2017-06-27 出版日期:2017-10-05 发布日期:2017-10-05
通讯作者: Guang-Rui Gu E-mail:grgu@ybu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51272224 and 11164031).

Structural, optical, and electrical properties of Cu-doped ZrO₂ films prepared by magnetron co-sputtering

Nian-Qi Yao(姚念琦), Zhi-Chao Liu(刘智超), Guang-Rui Gu(顾广瑞), Bao-Jia Wu(吴宝嘉)

Department of Physics, College of Science, Yanbian University, Yanji 133002, China

Received:2017-04-10 Revised:2017-06-27 Online:2017-10-05 Published:2017-10-05
Contact: Guang-Rui Gu E-mail:grgu@ybu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51272224 and 11164031).

摘要/Abstract

摘要：

Copper (Cu)-doped ZrO₂ (CZO) films with different Cu content (0 at.%~8.07 at.%) are successfully deposited on Si (100) substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO₂ monocline (111) preferred orientation, which indicates that Cu atoms are doped in ZrO₂ host lattice. The crystallite size estimated form x-ray diffraction (XRD) increases by Cu doping, which accords with the result observed from the scanning electron microscope (SEM). The electrical resistivity decreases from 2.63 Ω.cm to 1.48 Ω·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO films.

关键词: Cu-doped ZrO₂ films, magnetron co-sputtering, resistivity, transmittance

Abstract:

Key words: Cu-doped ZrO₂ films, magnetron co-sputtering, resistivity, transmittance

中图分类号: (Nucleation and growth)

68.55.A-

73.61.-r (Electrical properties of specific thin films) 78.66.-w (Optical properties of specific thin films) 81.15.Cd (Deposition by sputtering)

姚念琦, 刘智超, 顾广瑞, 吴宝嘉. Structural, optical, and electrical properties of Cu-doped ZrO₂ films prepared by magnetron co-sputtering[J]. 中国物理B, 2017, 26(10): 106801-106801.

Nian-Qi Yao(姚念琦), Zhi-Chao Liu(刘智超), Guang-Rui Gu(顾广瑞), Bao-Jia Wu(吴宝嘉). Structural, optical, and electrical properties of Cu-doped ZrO₂ films prepared by magnetron co-sputtering[J]. Chin. Phys. B, 2017, 26(10): 106801-106801.

参考文献 36

[1]	Reisfeld R, Zelner M and Patra A 2000 J. Alloys Compd. 300 147151
[2]	Pamu D, Sudheendran K, Krishna M G, Raju K C J and Bhatnagar A K 2009 Thin Solid Films 517 15871591
[3]	Lee W G, Cho K H, Lee S B, Park S B and Jang H 2009 J. Alloys Compd. 474 268272
[4]	Padmamalini N and Ambujam K 2014 Superlattices Microstruct. 76 376384
[5]	Khojier K, Savaloni H and Jafari F 2013 J. Theor. Appl. Phys. 7 55
[6]	Chakraborty S, Bera M K, Dalapathi G K, Paramanik D, Varma S, Bose P K, Bhattacharya S and Maiti C K 2006 Semicond. Sci. Technol. 21 467472
[7]	Ma C Y and Zhang Q Y 2008 Vacuum 82 847851
[8]	Hembram K P S S, Dutta G, Waghmare U V and Rao G M 2007 Physica B 399 2126
[9]	Zhang H H, Ma C Y and Zhang Q Y 2009 Vacuum 83 13111316
[10]	Septawendar R, Purwasasmita B S, Suhanda, Nurdiwijayanto L and Edwin F 2011 J. Ceram. Process. Res. 12 110113
[11]	Pakma O, özdemir C, Kariper I A, özaydin C and Güllü ö 2016 Appl. Surf. Sci. 377 159166
[12]	Ray J C, Pramanik P and Ram S 2001 Mater. Lett. 48 281291
[13]	Xiao Q L, Xu C, Shao S Y, Shao J D and Fan Z X 2009 Vacuum 83 366371
[14]	Jeong J and Yong K 2003 J. Cryst. Growth 254 6569
[15]	Gordon G R, Becker J, Hausmann D and Suh S 2001 Chem. Mater. 13 24632464
[16]	Berlin I J and Joy K 2015 Physica B 457 182187
[17]	Sethi G, Sunal P, Horn M W and Lanagan M T 2009 J. Vac. Sci. Technol. A 27 577583
[18]	Thaveedeetrakul A, Witit-anun N and Boonamnuayvitay V 2012 Appl. Surf. Sci. 258 26122619
[19]	Kumar A, Dhiman P and Singh M 2016 Ceram. Int. 42 79187923
[20]	Bruns S, Vergöhl M, Werner O and Wallendorf T 2012 Thin Solid Films 520 41224126
[21]	Musil J, Sklenka J, Čerstvy R, Suzuki T, Mori T and Takahashi M 2012 Surf. Coat. Technol. 207 355360
[22]	Myagkov V G, Bykova L E, Bayukov O A, Zhigalov V S, Tambasov I A, Zharkov S M, Matsynin A A and Bondarenko G N 2015 J. Alloys Compd. 636 223228
[23]	Joy K 2014 Thin Solid Films 556 99104
[24]	Seidel S, Sabelfeld A, Strohmeyer R, Schreiber G, Klemm V, Rafaja D, Joseph Y and Heitmann J 2016 Thin Solid Films 606 1318
[25]	Korsunska N, Baran M, Polishchuk Y, Kolomys O, Stara T, Kharchenko M, Gorban O, Strelchuk V, Venger Y, Kladko V and Khomenkovaa L 2015 ECS J. Solid State Sci. Technol. 4 103110
[26]	Korsunska N, Polishchuk Y, Kladko V, Portier X and Khomenkova L 2017 Mater. Res. Express 4 035024
[27]	Mukhtar M, Munisa L and Saleh R 2012 Mater. Sci. Appl. 3 543551
[28]	Holzwarth U and Gibson N 2011 Nat. Nanotechnol. 6 534
[29]	Anitha V S, Lekshmy S S and Joy K 2016 J. Alloys Compd. 675 331340
[30]	Kumaravel R, Ramamurthi K, Sulania I, Asokan K and Kanjilal D 2011 Radiat. Phys. Chem. 80 435439
[31]	Schuetze A P, Lewis W, Brown C and Geerts W J 2004 Am. J. Phys. 72 149153
[32]	Sreedhar A, Kwon J H, Yi J, Kim J S and Gwag J S 2016 Mater. Sci. Semicond. Process. 49 814
[33]	Presto S, Viviani M 2016 Solid State Ionics 295 111116
[34]	Paraguay F, Yoshida M M, Morales J, Solis J and Estrada W 2000 Thin Solid Films 373 137140
[35]	Tarwal N L, Gurav K V, Mujawar S H, Sadale S B, Nam K W, Bae W R, Moholkar A V, Kim J H, Patil P S and Jang J H 2014 Ceram. Int. 40 76697677
[36]	Sandeep K M, Bhat S and Dharmaprakash S M 2017 J. Phys. Chem. Solids 104 3644

Structural, optical, and electrical properties of Cu-doped ZrO₂ films prepared by magnetron co-sputtering

Structural, optical, and electrical properties of Cu-doped ZrO₂ films prepared by magnetron co-sputtering

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 36

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Qiangguo Zhou(周强国), Yang Li(李洋), Yongzhen Li(李永振), Niangjuan Yao(姚娘娟), and Zhiming Huang(黄志明). High efficiency of broadband transmissive metasurface terahertz polarization converter[J]. 中国物理B, 2023, 32(2): 24201-024201.
[2]	Jia-Ming Zhao(赵佳铭) and Zhi-He Wang(王智河). Anisotropic superconducting properties of FeSe_0.5Te_0.5 single crystals[J]. 中国物理B, 2022, 31(9): 97402-097402.
[3]	Chunli Yao(姚春丽), Tingna Shao(邵婷娜), Mingrui Liu(刘明睿), Zitao Zhang(张子涛), Weimin Jiang(姜伟民), Qiang Zhao(赵强), Yujie Qiao(乔宇杰), Meihui Chen(陈美慧), Xingyu Chen(陈星宇), Ruifen Dou(窦瑞芬), Changmin Xiong(熊昌民), and Jiacai Nie(聂家财). Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr₂CrWO₆/SrTiO₃ films[J]. 中国物理B, 2022, 31(10): 107302-107302.
[4]	Qi-Qi Yang(杨棋棋), Zhuang Liu(刘壮), Chao-Yue Zhang(张超越), Hai-Chen Wu(吴海辰), Xiao-Lei Gao(高晓磊), Yi-Long Ma(马毅龙), Ren-Jie Chen(陈仁杰), and A-Ru Yan(闫阿儒). Magnetic properties and resistivity of a 2:17-type SmCo magnet doped with ZrO₂[J]. 中国物理B, 2021, 30(7): 77504-077504.
[5]	Lang Wu(吴浪), Yue-Hong Ren(任月虹), Wen-Qiang Liao(廖文强), Xi-Chen Huang(黄曦晨), Fu-Sheng Liu(刘福生), Ming-Jian Zhang(张明建), and Yan-Yun Sun(孙燕云). Phase transition of shocked water up to 6 GPa: Transmittance investigation[J]. 中国物理B, 2021, 30(5): 50701-050701.
[6]	Xue-Yan Wang(王雪岩), Hu Wang(王虎), Luo-Ran Chen(陈烙然), Yu-Chuan Shao(邵宇川), and Jian-Da Shao(邵建达). Suppression of ion migration in perovskite materials by pulse-voltage method[J]. 中国物理B, 2021, 30(11): 118104-118104.
[7]	张浩, 唐慧丽, 何诺天, 朱智超, 陈佳文, 刘波, 徐军. Growth and physical characterization of high resistivityFe: β-Ga₂O₃ crystals[J]. 中国物理B, 2020, 29(8): 87201-087201.
[8]	刘献省, 程永光, 袁保合, 梁二军, 张伟风. Laser scattering, transmittance and low thermal expansion behaviors in Y_2-x(ZnLi)_xMo₃O₁₂ by forming regular grains[J]. 中国物理B, 2019, 28(9): 96501-096501.
[9]	余小威, 崔慧源, 朱茂东, 夏志林, 赛青林. Influence of annealing treatment on the luminescent properties of Ta:β-Ga₂O₃ single crystal[J]. 中国物理B, 2019, 28(7): 77801-077801.
[10]	倪顺利, 胡卫, 沈沛沛, 魏忠旭, 刘少博, 李栋, 袁洁, 俞理, 金魁, 周放, 董晓莉, 赵忠贤. Different behavior of upper critical field in Fe_1-xSe single crystals[J]. 中国物理B, 2019, 28(12): 127401-127401.
[11]	毛慧灿, 龚冬良, 马肖燕, 罗会仟, 杨义峰, 单磊, 李世亮. Nonlinear uniaxial pressure dependence of the resistivity in Sr_1-xBa_xFe_1.97Ni_0.03As₂[J]. 中国物理B, 2018, 27(8): 87402-087402.
[12]	赵亚丽, 马富花, 李旭峰, 马江将, 贾琨, 魏学红. A transparent electromagnetic-shielding film based on one-dimensional metal-dielectric periodic structures[J]. 中国物理B, 2018, 27(2): 27302-027302.
[13]	许亦鹏, 赵晓林, 颜廷亮. General equation describing viscosity of metallic melts under horizontal magnetic field[J]. 中国物理B, 2017, 26(3): 36601-036601.
[14]	钱明灿, 张淑芳, 罗海军, 龙兴明, 吴芳, 方亮, 魏大鹏, 孟凡明, 胡宝山. Simulation on effect of metal/graphene hybrid transparent electrode on characteristics of GaN light emitting diodes[J]. 中国物理B, 2017, 26(10): 104402-104402.
[15]	张威, 戴耀民, 许兵, 杨润, 刘金云, 随强涛, 罗会仟, 张睿, 鲁兴业, 杨浩, 邱祥冈. Magnetoresistivity and filamentary superconductivity in nickel-doped BaFe₂As₂[J]. 中国物理B, 2016, 25(4): 47401-047401.