中国物理B ›› 2007, Vol. 16 ›› Issue (11): 3494-3497.doi: 10.1088/1009-1963/16/11/056

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MMIC LNA based novel composite-channel Al0.3 Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs

程知群, 蔡勇, 刘杰, 周玉刚, LauKeiMay, ChenJ.Kevin   

  • 出版日期:2007-11-20 发布日期:2007-11-20

MMIC LNA based novel composite-channel Al0.3Ga0.7N/Al0.05Ga 0.95N/GaN HEMTs

Cheng Zhi-Qun(程知群)a)b)†, Cai Yong(蔡勇)b), Liu Jie(刘杰)b), Zhou Yu-Gang(周玉刚)b), Lau Kei Mayb), and Chen J. Kevinb)   

  1. a Microelectronics CAD Center, Hangzhou Dianzi University, Hangzhou 310018, China; b Department of Electrical and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, China
  • Online:2007-11-20 Published:2007-11-20

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Abstract: A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1 $\mu $m-gate composite-channel Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.05}$Ga$_{0.95}$N/GaN  high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of --6 dB and an output return loss of --16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 $\mu $m $\times $ 100 $\mu $m device showed very high-dynamic range with decent gain and noise figure. 

Key words: slow noise amplifier, composite-channel AlGaN/GaN HEMTs, linearity

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
84.40.Lj (Microwave integrated electronics) 85.30.Tv (Field effect devices)