中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1296-1300.doi: 10.1088/1009-1963/15/6/027

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Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy

宋珍1, 吴有余2, 陈小强2, 张福甲2, 欧谷平3   

  1. (1)School of Basic Courses, Beijing Institute of Machinery, Beijing 100085, China; (2)School of Physical Science and Technology, Lanzhou University,Lanzhou 730000, China; (3)School of Physical Science and Technology, Lanzhou University,Lanzhou 730000, China;School of Physics, Hunan University of Science and Technology,Xiangtan 411201, China
  • 收稿日期:2005-10-17 修回日期:2006-03-06 出版日期:2006-06-20 发布日期:2006-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60276026) and the Natural Science Foundation of Gansu Province, China (Grant No ZS031-A25-012-G).

Analysis of the injection layer of PTCDA in OLEDs using x-ray photoemission spectroscopy and atomic force microscopy

Ou Gu-Ping (欧谷平)ab, Song Zhen (宋珍)c, Wu You-Yu (吴有余)a, Chen Xiao-Qiang (陈小强)a, Zhang Fu-Jia (张福甲)a    

  1. a School of Physical Science and Technology, Lanzhou University,Lanzhou 730000, China; b School of Physics, Hunan University of Science and Technology,Xiangtan 411201, China; c School of Basic Courses, Beijing Institute of Machinery, Beijing 100085, China
  • Received:2005-10-17 Revised:2006-03-06 Online:2006-06-20 Published:2006-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60276026) and the Natural Science Foundation of Gansu Province, China (Grant No ZS031-A25-012-G).

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摘要： Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy . At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes (OLEDs).

关键词: atomic force microscopy, x-ray photoemission spectroscopy, PTCDA/ITO

Abstract: Through the investigation of the sample surface and interface of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA)/indium-tin-oxide (ITO) thin films using atomic force microscopy, it has been found that the surface is complanate, the growth is uniform and the defects cover basically the surface of ITO. Furthermore, the number of pinholes is small. The analysis of the sample surface and interface further verifies this result by using x-ray photoemission spectroscopy . At the same time, PTCDA is found to have the ability of restraining the diffusion of chemical constituents from ITO to the hole transport layer, which is beneficial to the improvement of the performance and the useful lifetime of the organic light emitting diodes (OLEDs).

Key words: atomic force microscopy, x-ray photoemission spectroscopy, PTCDA/ITO

中图分类号:  (Interfaces; heterostructures; nanostructures)

  • 79.60.Jv
68.37.Ps (Atomic force microscopy (AFM)) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 85.60.Jb (Light-emitting devices)