中国物理B ›› 2006, Vol. 15 ›› Issue (4): 878-881.doi: 10.1088/1009-1963/15/4/037

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Improvement in efficiency of solar cell by removing Cu2－xSe from CIGS film surface

李伟, 孙云, 刘伟, 李风岩, 周琳   

  1. Institute of photoelectron, College of Information Technical Science,Nankai University, Tianjin 300071, China
  • 收稿日期:2005-06-02 修回日期:2006-01-20 出版日期:2006-04-20 发布日期:2006-04-20

Improvement in efficiency of solar cell by removing Cu2-xSe from CIGS film surface

Li Wei (李伟), Sun Yun (孙云), Liu Wei (刘伟), Li Feng-Yan (李风岩), Zhou Lin (周琳)   

  1. Institute of photoelectron, College of Information Technical Science,Nankai University, Tianjin 300071, China
  • Received:2005-06-02 Revised:2006-01-20 Online:2006-04-20 Published:2006-04-20

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摘要： CIGS thin films are deposited by sputtering and selenization. The synthesis of semiconducting polycrystalline thin films and characteristics of devices based on the CIGS absorbing layers are investigated. Their microstructures are characterized by x-ray diffraction and Raman spectroscopy. The results reveal that there exist metallic Cu2-xSe compounds in CIGS film surfaces and the compounds are thought to be responsible for the degradation of the open circuit voltage of solar cells. The optimization of selenization temperature profile and copper content in the precursor surfaces is studied, concluding that the conversion efficiency may be improved by removing metallic Cu2-xSe compounds from the surfaces of CIGS thin films.

关键词: Cu2-xSe, CIGS thin films, optimization of temperature profile

Abstract: CIGS thin films are deposited by sputtering and selenization. The synthesis of semiconducting polycrystalline thin films and characteristics of devices based on the CIGS absorbing layers are investigated. Their microstructures are characterized by x-ray diffraction and Raman spectroscopy. The results reveal that there exist metallic Cu2-xSe compounds in CIGS film surfaces and the compounds are thought to be responsible for the degradation of the open circuit voltage of solar cells. The optimization of selenization temperature profile and copper content in the precursor surfaces is studied, concluding that the conversion efficiency may be improved by removing metallic Cu2-xSe compounds from the surfaces of CIGS thin films.

Key words: Cu2-xSe, CIGS thin films, optimization of temperature profile

中图分类号:  (Performance characteristics of energy conversion systems; figure of merit)

  • 84.60.Bk
61.05.cp (X-ray diffraction) 68.47.Fg (Semiconductor surfaces) 78.30.-j (Infrared and Raman spectra) 81.15.Cd (Deposition by sputtering) 84.60.Jt (Photoelectric conversion)