Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

doi:10.1088/1674-1056/19/2/027303

中国物理B ›› 2010, Vol. 19 ›› Issue (2): 27303-027303.doi: 10.1088/1674-1056/19/2/027303

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

王钊, 黎兵, 郑旭, 谢婧, 黄征, 刘才, 冯良桓, 郑家贵

College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

收稿日期:2009-05-16 修回日期:2009-07-08 出版日期:2010-02-15 发布日期:2010-02-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.~60506004) and the National High Technology Research and Development Program of China (Grant No.~2003AA513010).

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Wang Zhao(王钊), Li Bing(黎兵)^†, Zheng Xu(郑旭), Xie Jing(谢婧), Huang Zheng(黄征), Liu Cai(刘才), Feng Liang-Huan(冯良桓), and Zheng Jia-Gui(郑家贵)

College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

Received:2009-05-16 Revised:2009-07-08 Online:2010-02-15 Published:2010-02-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60506004) and the National High Technology Research and Development Program of China (Grant No. 2003AA513010).

摘要/Abstract

摘要： Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128~eV, originates from the vacancy of Cd (V_Cd. The electron trap E1, found at E_c-0.178~eV, is considered to be correlated with the interstitial Cu_i⁼ in CdTe.

Abstract: Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy (DLTS), we study the deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at E_v+0.128 eV, originates from the vacancy of Cd (V_Cd). The electron trap E1, found at E_c-0.178 eV, is considered to be correlated with the interstitial Cu_i⁺ in CdTe.

Key words: deep level transient spectroscopy, CdS/CdTe solar cells, Te:Cu back contact

中图分类号: (II-VI semiconductors)

71.55.Gs

84.60.Jt (Photoelectric conversion) 84.60.Bk (Performance characteristics of energy conversion systems; figure of merit)

王钊, 黎兵, 郑旭, 谢婧, 黄征, 刘才, 冯良桓, 郑家贵. Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact[J]. 中国物理B, 2010, 19(2): 27303-027303.

Wang Zhao(王钊), Li Bing(黎兵), Zheng Xu(郑旭), Xie Jing(谢婧), Huang Zheng(黄征), Liu Cai(刘才), Feng Liang-Huan(冯良桓), and Zheng Jia-Gui(郑家贵). Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact[J]. Chin. Phys. B, 2010, 19(2): 27303-027303.

参考文献 17

[1]	Capper P 1994 Properties of Narrow Gap Cadmium-Based Compounds (Volume 10)(London: IEE) p. 591
[2]	Chu T L and Chu S S 1995 Solid-State Electron 38 533
[3]	Rose D H, Hasoon F S, Dhere R G, Albin D S, Ribelin R M, Li X S,Mahathongdy Y, Gessert T A and Sheldon P 1990 Progress inPhotovoltaics: Research and Applications 7 331
[4]	Li W, Feng L H, Zhang J Q, Wu L L, Cai Y P, Zheng J G, Cai W, Li B andLei Z 2008 Sci. Chin. Ser. E: Technological Sciences 51 33
[5]	Hegedus S S, McCandless B E and Birkmire R W 2000 Proc. 28th IEEE PVSC 535
[6]	He J X, Zheng J G, Li W, Feng L H, Cai W, Cai Y P, Zhang J Q, Li B, LeiZ, Wu L L and Wang W W 2007 Acta Phys. Sin. 56 5548 (in Chinese)
[7]	Li B, Liu C, Feng L H, Zhang J Q, Zheng J G, Cai Y P, Cai W, Wu L L, LiW, Lei Z, Zeng G G and Xia G P 2009 Acta Phys. Sin. 58 1987 (in Chinese)
[8]	Allen J W 1995 Semicond. Sci. Technol. 10 1049
[9]	Li W, Feng L H, Wu L L, Cai Y P, Zhang J Q, Zheng J G, Cai W, Li B, LeiZ and Zhang D M 2005 Acta Phys. Sin. 54 1879 (in Chinese)
[10]	Komin V, Viswanathan V, Tetali B, Morel D L and Ferekides C S 2002 Proc. 29th IEEE PVSC 736
[11]	Balcioglu A, Ahrenkiel R K and Hasoon F 2000 J. Appl. Phys. 88 7175
[12]	Louren?o M A, Yew Y K, Homewood K P, Durose K, Richter H and BonnetD 1997 J. Appl. Phys. 82 1423
[13]	Castaldini A, Cavalini A and Fraboni B 1996 Appl. Phys. Lett. 69 3510
[14]	Castaldini A, Cavallini A, Fraboni B, Fernandez P and Piqueras J 1998 J. Appl. Phys. 83 2121
[15]	Lyubomirsky L, Rabinal M K and Cahen D 1997 J. Appl. Phys. 81 6684
[16]	Romero M J, Albin D S, Al-Jassim M M, Wu X Z, Moutinho H R and Dhere RG 2002 Appl. Phys. Lett. 81 2962
[17]	Versluys J, Clauws P, Nollet P, Degrave S and Burgelman M 2004 Thin Solid Films 451 434

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

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