中国物理B ›› 2006, Vol. 15 ›› Issue (2): 460-465.doi: 10.1088/1009-1963/15/2/038

• • 上一篇    

The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance

颜晓红1, 郭朝辉1, 丁书龙2, 杨玉荣2, 肖杨2, 宣凯3   

  1. (1)College of Sciences, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; (2)Department of Physics & Institute of Modern Physics, Xiangtan University, Xiangtan 411105, China; (3)Department of Physics & Institute of Modern Physics, Xiangtan University, Xiangtan 411105, China;College of Sciences, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • 收稿日期:2005-07-27 修回日期:2005-11-23 出版日期:2006-02-20 发布日期:2006-02-20
  • 基金资助:
    Project supported by the Scientific and Technological Research Foundation of the State Education Ministry of China (Grant No 204099) and the Program for New Century Excellent Talents in University (Grant No NCET-04-0779).

The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance

Xuan Kai (宣凯)ab, Yan Xiao-Hong (颜晓红)b, Ding Shu-Long (丁书龙)a, Yang Yu-Rong (杨玉荣)a, Xiao Yang (肖杨)a, Guo Zhao-Hui (郭朝辉)b    

  1. a Department of Physics & Institute of Modern Physics, Xiangtan University, Xiangtan 411105, China; b College of Sciences, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • Received:2005-07-27 Revised:2005-11-23 Online:2006-02-20 Published:2006-02-20
  • Supported by:
    Project supported by the Scientific and Technological Research Foundation of the State Education Ministry of China (Grant No 204099) and the Program for New Century Excellent Talents in University (Grant No NCET-04-0779).

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摘要： ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The $I$--$V$ curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p--n junction behaviour and ohmic contact behaviour, respectively. The formation of the p--n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance (lower onset voltage and larger emission current) is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.

关键词: field emission, interface junction, p-n junction, ohmic contact

Abstract: ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The $I$--$V$ curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p--n junction behaviour and ohmic contact behaviour, respectively. The formation of the p--n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance (lower onset voltage and larger emission current) is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.

Key words: field emission, interface junction, p-n junction, ohmic contact

中图分类号:  (Metal-nonmetal contacts)

  • 73.40.Ns
79.70.+q (Field emission, ionization, evaporation, and desorption) 68.37.Ps (Atomic force microscopy (AFM))