[1] |
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
[2] |
Jian-Mei Li(李健梅), Dong Hao(郝东), Li-Huan Sun(孙丽欢), Xiang-Qian Tang(唐向前), Yang An(安旸), Xin-Yan Shan(单欣岩), and Xing-Hua Lu(陆兴华). Enhanced photon emission by field emission resonances and local surface plasmon in tunneling junction[J]. 中国物理B, 2022, 31(11): 116801-116801. |
[3] |
Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302. |
[4] |
Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains[J]. 中国物理B, 2021, 30(9): 96803-096803. |
[5] |
Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Enhanced absorption process in the thin active region of GaAs based p-i-n structure[J]. 中国物理B, 2021, 30(9): 97803-097803. |
[6] |
Yao Wang(王垚), Sheng-Wang Yu(于盛旺), Yan-Peng Xue(薛彦鹏), Hong-Jun Hei(黑鸿君), Yan-Xia Wu(吴艳霞), and Yan-Yan Shen(申艳艳). Effect of metal nanoparticle doping concentration on surface morphology and field emission properties of nano-diamond films[J]. 中国物理B, 2021, 30(6): 68101-068101. |
[7] |
侯明辰, 谢刚, 盛况. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. 中国物理B, 2019, 28(3): 37302-037302. |
[8] |
李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 吴海燕, 马紫光, 王禄, 贾海强, 王文新, 陈弘. Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction[J]. 中国物理B, 2018, 27(9): 97104-097104. |
[9] |
刘頔, 祁晓卓, 邱奎霖, Takashi Taniguchi, 任希锋, 郭国平. Optoelectronic properties of bottom gate-defined in-plane monolayer WSe2 p-n junction[J]. 中国物理B, 2018, 27(8): 87303-087303. |
[10] |
王磊, 张家琦, 李柳暗, 前田裕太郎, 敖金平. Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2017, 26(3): 37201-037201. |
[11] |
杨汛, 甘海波, 田颜, 许宁生, 邓少芝, 陈军, 陈焕君, 梁世东, 刘飞. An easy way to controllably synthesize one-dimensional SmB6 topological insulator nanostructures and exploration of their field emission applications[J]. 中国物理B, 2017, 26(11): 118103-118103. |
[12] |
王文奇, 王禄, 江洋, 马紫光, 孙令, 刘洁, 孙庆灵, 赵斌, 王文新, 刘伍明, 贾海强, 陈弘. Carrier transport in III-V quantum-dot structures for solar cells or photodetectors[J]. 中国物理B, 2016, 25(9): 97307-097307. |
[13] |
张永欣, 刘飞, 申承民, 李军, 邓少芝, 许宁生, 高鸿钧. Preparation of patterned boron nanowire films with different widths of unit-cell and their field emission properties[J]. 中国物理B, 2016, 25(8): 88102-088102. |
[14] |
张永欣, 刘飞, 申承民, 杨天中, 李军, 邓少芝, 许宁生, 高鸿钧. Preparation of few-layer graphene-capped boron nanowires and their field emission properties[J]. 中国物理B, 2016, 25(7): 78101-078101. |
[15] |
Z A Umar, R Ahmad, R S Rawat, M A Baig, J Siddiqui, T Hussain. Structural and mechanical properties of Al-C-N films deposited at room temperature by plasma focus device[J]. 中国物理B, 2016, 25(7): 75201-075201. |