中国物理B ›› 2006, Vol. 15 ›› Issue (11): 2706-2709.doi: 10.1088/1009-1963/15/11/040

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Growth studies of m-GaN layers on LiAlO2 by MOCVD

韩平1, 谢自力1, 张荣1, 刘成祥2, 周圣明3, 王军3, 周建华4, 邹军5, 黄涛华6   

  1. (1)Laboratory of Solid State Microstructures and Department of Physics,Nanjing University, Nanjing 210093, China; (2)Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093, China; (3)Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; (4)Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China ;Graduate School of Chinese Academy of Sciences, Beijing 100039,
  • 收稿日期:2005-12-12 修回日期:2006-03-08 出版日期:2006-11-20 发布日期:2006-11-20

Growth studies of m-GaN layers on LiAlO2 by MOCVD

Zou Jun(邹军)a)b)†, Liu Cheng-Xiang(刘成祥)c), Zhou Sheng-Ming(周圣明)a)‡, Wang Jun(王军)a), Zhou Jian-Hua(周建华)a)b), Huang Tao-Hua(黄涛华)a)b), Han Ping(韩平)c), Xie Zi-Li(谢自力)c), and Zhang Rong(张荣)c)   

  1. a Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; b Graduate School of Chinese Academy of Sciences, Beijing 100039, China; c Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2005-12-12 Revised:2006-03-08 Online:2006-11-20 Published:2006-11-20

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摘要： This paper reports that the $m$-plane GaN layer is grown on (200)-plane LiAlO$_{2}$ substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80{\%}), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at $\sim$3.41\,eV with full-width at half maximum of 120\,meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO$_{2}$ substrate.

关键词: LiAlO2 substrate, $m$-plane GaN layer, optical properties

Abstract: This paper reports that the $m$-plane GaN layer is grown on (200)-plane LiAlO$_{2}$ substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer's thickness. The high transmittance (80%), sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at $\sim$3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO$_{2}$ substrate.

Key words: LiAlO2 substrate, $m$-plane GaN layer, optical properties

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.55.-a (Thin film structure and morphology) 68.60.Bs (Mechanical and acoustical properties) 78.30.Fs (III-V and II-VI semiconductors) 78.55.Cr (III-V semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))