中国物理B ›› 2005, Vol. 14 ›› Issue (11): 2293-2229.doi: 10.1088/1009-1963/14/11/025
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
胡一帆1, C.D.Beling2
Hu Yi-Fan (胡一帆)a, Beling C. D.b
摘要: Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This ``rectifying'' effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit (VEPF) analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.
中图分类号: (Positron annihilation)