[1] |
Z W Liang(梁正伟), P Wu(吴平), L C Wang(王利晨), B G Shen(沈保根), and Zhi-Hong Wang(王志宏). Conductive path and local oxygen-vacancy dynamics: Case study of crosshatched oxides[J]. 中国物理B, 2023, 32(4): 47303-047303. |
[2] |
Yilin Li(李屹林), Hui Zhu(朱慧), Rui Li(李锐), Jie Liu(柳杰), Jinjuan Xiang(项金娟), Na Xie(解娜), Zeng Huang(黄增), Zhixuan Fang(方志轩), Xing Liu(刘行), and Lixing Zhou(周丽星). Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field[J]. 中国物理B, 2022, 31(8): 88502-088502. |
[3] |
Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘). Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric[J]. 中国物理B, 2022, 31(7): 77701-077701. |
[4] |
Yong Li(李勇), Xiaozhou Chen(陈孝洲), Maowu Ran(冉茂武), Yanchao She(佘彦超), Zhengguo Xiao(肖政国), Meihua Hu(胡美华), Ying Wang(王应), and Jun An(安军). Dependence of nitrogen vacancy color centers on nitrogen concentration in synthetic diamond[J]. 中国物理B, 2022, 31(4): 46107-046107. |
[5] |
Yong Zhang(张勇), Xinliang Huang(黄新亮), Jinglei Zhang(张警蕾), Wenshuai Gao(高文帅), Xiangde Zhu(朱相德), and Li Pi(皮雳). Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal[J]. 中国物理B, 2022, 31(3): 37102-037102. |
[6] |
Han Xu(许涵), Tongtong Shang(尚彤彤), Xuefeng Wang(王雪锋), Ang Gao(高昂), and Lin Gu(谷林). Origin of the low formation energy of oxygen vacancies in CeO2[J]. 中国物理B, 2022, 31(10): 107102-107102. |
[7] |
Qin-Qin Wang(王琴琴), Rui-Rong Wang(王瑞荣), Jin-Ping Liu(刘金萍), Shao-Zhuo Lin(林绍卓), Liang-Wei Wu(武亮伟), Hao Guo(郭浩), Zhong-Hao Li(李中豪), Huan-Fei Wen(温焕飞), Jun Tang(唐军), Zong-Min Ma(马宗敏), and Jun Liu (刘俊). Single-channel vector magnetic information detection method based on diamond NV color center[J]. 中国物理B, 2021, 30(8): 80701-080701. |
[8] |
Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector[J]. 中国物理B, 2021, 30(8): 87303-087303. |
[9] |
Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春). Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors[J]. 中国物理B, 2021, 30(12): 126104-126104. |
[10] |
Yajing Zhang(张亚婧), Keke Song(宋可可), Shuo Cao(曹硕), Xiaodong Jian(建晓东), and Ping Qian(钱萍). Density functional theory study of formaldehyde adsorption and decomposition on Co-doped defective CeO2 (110) surface[J]. 中国物理B, 2021, 30(10): 103101-103101. |
[11] |
Bo Sun(孙博), Dong He(贺栋), Hongbo Wang(王宏博), Jiangchao Liu(刘江超), Zunjian Ke(柯尊健), Li Cheng(程莉), and Xiangheng Xiao(肖湘衡). Oxygen vacancies and V co-doped Co3O4 prepared by ion implantation boosts oxygen evolution catalysis[J]. 中国物理B, 2021, 30(10): 106102-106102. |
[12] |
潘宇浩, 雷宝, 乔婧思, 胡智鑫, 周武, 季威. Selective linear etching of monolayer black phosphorus using electron beams[J]. 中国物理B, 2020, 29(8): 86801-086801. |
[13] |
张莎莎, 姚正军, 孔祥山, 陈良, 秦敬玉. First-principles calculations of solute-vacancy interactions in aluminum[J]. 中国物理B, 2020, 29(6): 66103-066103. |
[14] |
周保花, 张福杰, 刘笑, 宋宇, 左旭. Ab initio calculations on oxygen vacancy defects in strained amorphous silica[J]. 中国物理B, 2020, 29(4): 47103-047103. |
[15] |
王志成, 崔璋璋, 徐珲, 翟晓芳, 陆亚林. Effects of oxygen vacancy concentration and temperature on memristive behavior of SrRuO3/Nb:SrTiO3 junctions[J]. 中国物理B, 2019, 28(8): 87303-087303. |