中国物理B ›› 2004, Vol. 13 ›› Issue (9): 1560-1563.doi: 10.1088/1009-1963/13/9/034

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Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

王晓光1, 张晓昕2, 曾一平2, 王保强2, 朱占平2   

  1. (1)National Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (2)Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2003-12-15 修回日期:2004-01-16 出版日期:2004-06-21 发布日期:2005-06-21

Relationship between the electric performance and the photoluminescence spectra of resonant tunnelling diodes

Zhang Xiao-Xin (张晓昕)a, Zeng Yi-Ping (曾一平)b, Wang Xiao-Guang (王晓光)b, Wang Bao-Qiang (王保强)a, Zhu Zhan-Ping (朱占平)a   

  1. a Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b National Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2003-12-15 Revised:2004-01-16 Online:2004-06-21 Published:2005-06-21

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摘要： Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.

关键词: resonant tunnelling diode, photoluminescence, negative differential resistance, integrated luminescence intensity

Abstract: Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.

Key words: resonant tunnelling diode, photoluminescence, negative differential resistance, integrated luminescence intensity

中图分类号:  (Junction diodes)

  • 85.30.Kk
78.55.Cr (III-V semiconductors) 73.63.Hs (Quantum wells) 78.67.De (Quantum wells) 81.05.Ea (III-V semiconductors)