中国物理B ›› 2002, Vol. 11 ›› Issue (9): 944-947.doi: 10.1088/1009-1963/11/9/317

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The charge storage of the nc-Si layer

戴敏, 张林, 鲍云, 石建军, 张铠, 李伟, 黄信凡, 陈坤基   

  1. State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2002-02-02 修回日期:2002-05-15 出版日期:2002-09-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 90101020 and 60071019), the Natural Science Foundation of Jiangsu Province, China (Grant Nos BK2001028 and BG2001002), the State Key Programme of Basic Research of China (Gra

The charge storage of the nc-Si layer

Dai Min (戴敏), Zhang Lin (张林), Bao Yun (鲍云), Shi Jian-Jun (石建军), Chen Kai (张铠), Li Wei (李伟), Huang Xin-Fan (黄信凡), Chen Kun-Ji (陈坤基)   

  1. State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2002-02-02 Revised:2002-05-15 Online:2002-09-12 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 90101020 and 60071019), the Natural Science Foundation of Jiangsu Province, China (Grant Nos BK2001028 and BG2001002), the State Key Programme of Basic Research of China (Gra

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摘要： Sandwiched structures (a-SiNx/a-Si/a-SiNx) have been fabricated by the plasma enhanced chemical vapour deposition technique. A Si nanocrystal (nc-Si) layer was formed by crystallization of an a-Si layer according to the constrained crystallization principle after quasi-static thermal annealing at 1100℃ for 30 min. Transmission electron microscopy (TEM) and Raman scattering spectroscopy clearly demonstrated that nc-Si grains were formed in the as-deposited a-Si layer after annealing. The density of nc-Si grains is about 1011cm-2 as shown by TEM photographs. Using capacitance－voltage (C－V) measurements we investigated the electrical characteristics of the sandwiched structures. The charge storage phenomenon of the nc-Si layer was observed from the shift of flat-band voltage (VFB) in C－V curves at a high frequency (1 MHz). We estimated the density of nc-Si grains to be about 1011cm-2 from the shift value of VFB, which is in agreement with the result of TEM photographs. At the same time, we found that the shift of VFB increased with the increase of the applied constant dc voltage or the thickness of the nc-Si layer.

Abstract: Sandwiched structures (a-SiNx/a-Si/a-SiNx) have been fabricated by the plasma enhanced chemical vapour deposition technique. A Si nanocrystal (nc-Si) layer was formed by crystallization of an a-Si layer according to the constrained crystallization principle after quasi-static thermal annealing at 1100℃ for 30 min. Transmission electron microscopy (TEM) and Raman scattering spectroscopy clearly demonstrated that nc-Si grains were formed in the as-deposited a-Si layer after annealing. The density of nc-Si grains is about 1011cm-2 as shown by TEM photographs. Using capacitance－voltage (C－V) measurements we investigated the electrical characteristics of the sandwiched structures. The charge storage phenomenon of the nc-Si layer was observed from the shift of flat-band voltage (VFB) in C－V curves at a high frequency (1 MHz). We estimated the density of nc-Si grains to be about 1011cm-2 from the shift value of VFB, which is in agreement with the result of TEM photographs. At the same time, we found that the shift of VFB increased with the increase of the applied constant dc voltage or the thickness of the nc-Si layer.

Key words: nc-Si, thermal annealing, C－V characteristics, charge storage

中图分类号:  (Quantum well devices (quantum dots, quantum wires, etc.))

  • 85.35.Be
81.07.Ta (Quantum dots) 73.63.Bd (Nanocrystalline materials) 73.63.Kv (Quantum dots)