中国物理B ›› 2002, Vol. 11 ›› Issue (10): 1060-1065.doi: 10.1088/1009-1963/11/10/317

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The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

李伯臧1, 李玉现1, 谢征微2   

  1. (1)Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; Department of Physics, Sichuan Normal University, Chengdu 610066, China
  • 收稿日期:2002-03-27 修回日期:2002-05-31 出版日期:2002-10-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10074075) and by the State Key Program of Basic Research of China (Grant No G1999064509).

The effect of the ferromagnetic metal layer on tunnelling conductance and magnetoresistance in double magnetic planar junctions

Xie Zheng-Wei (谢征微)ab, Li Bo-Zang (李伯臧)a, Li Yu-Xian (李玉现)a   

  1. a Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; b Department of Physics, Sichuan Normal University, Chengdu 610066, China
  • Received:2002-03-27 Revised:2002-05-31 Online:2002-10-12 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10074075) and by the State Key Program of Basic Research of China (Grant No G1999064509).

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摘要： Based on the free-electron approximation, we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance (TMR) and tunnelling conductance (TC) in the double magnetic tunnel junctions (DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM, where FM, NM and I(S) represent the ferromagnetic metal, nonmagnetic metal and insulator (semiconductor), respectively. The FM, I(S) and inner NM layers are of finite thickness, while the thickness of the outer NM layer is infinite. The calculated results show that, due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers, the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations, and a much higher TMR can be obtained for suitable thicknesses of FM layers.

Abstract: Based on the free-electron approximation, we investigate the effect of the ferromagnetic metal layer on the tunnelling magnetoresistance (TMR) and tunnelling conductance (TC) in the double magnetic tunnel junctions (DMTJs) of the structure NM/FM/I(S)/NM/I(S)/FM/NM, where FM, NM and I(S) represent the ferromagnetic metal, nonmagnetic metal and insulator (semiconductor), respectively. The FM, I(S) and inner NM layers are of finite thickness, while the thickness of the outer NM layer is infinite. The calculated results show that, due to the spin-dependent interfacial potential barriers caused by electronic band mismatch between the various magnetic and nonmagnetic layers, the dependences of the TMR and TC on the thicknesses of the FM layers exhibit oscillations, and a much higher TMR can be obtained for suitable thicknesses of FM layers.

Key words: magnetic tunnelling junction, double-barrier magnetic junction, tunnelling magnetoresis-tance, tunnelling conductance

中图分类号:  (Tunneling)

  • 73.40.Gk
75.47.Np (Metals and alloys) 75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 73.20.At (Surface states, band structure, electron density of states) 73.40.Ns (Metal-nonmetal contacts) 73.25.+i (Surface conductivity and carrier phenomena)