中国物理B ›› 2001, Vol. 10 ›› Issue (9): 840-843.doi: 10.1088/1009-1963/10/9/313

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

TERAHERTZ SPECTRA EMITTED FROM HOT CARRIERS IN TWO-DIMENSIONAL SEMICONDUCTORS

雷啸霖, 刘世勇   

  1. Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China
  • 收稿日期:2001-03-12 修回日期:2001-05-10 出版日期:2005-06-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60076011), the Special Foundation for State Key Basic Research Program of China (Grant No. 2000683), the Chinese Ministry of Science and Technology, the Shanghai Municipal Co

TERAHERTZ SPECTRA EMITTED FROM HOT CARRIERS IN TWO-DIMENSIONAL SEMICONDUCTORS

Lei Xiao-lin (雷啸霖), Liu Shi-yong (刘世勇)   

  1. Department of Physics, Shanghai Jiao Tong University, Shanghai 200030, China
  • Received:2001-03-12 Revised:2001-05-10 Online:2005-06-12 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60076011), the Special Foundation for State Key Basic Research Program of China (Grant No. 2000683), the Chinese Ministry of Science and Technology, the Shanghai Municipal Co

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摘要： We propose a simple method to calculate the spectrum of spontaneous terahertz (THz) emission from hot carriers in two-dimensional semiconductors by means of transport quantities, which are easily obtained during the process of solving the transport problem using the recently developed balance-equation approach for THz-driven transport. The method has been applied to examine the surface emission from a GaAs/AlGaAs heterojunction and the edge emission from a GaAs-based multiple quantum-well system subjected to strong dc biases. The theoretical results obtained are in reasonably good agreement with measurements.

Abstract: We propose a simple method to calculate the spectrum of spontaneous terahertz (THz) emission from hot carriers in two-dimensional semiconductors by means of transport quantities, which are easily obtained during the process of solving the transport problem using the recently developed balance-equation approach for THz-driven transport. The method has been applied to examine the surface emission from a GaAs/AlGaAs heterojunction and the edge emission from a GaAs-based multiple quantum-well system subjected to strong dc biases. The theoretical results obtained are in reasonably good agreement with measurements.

Key words: terahertz emission, two-dimensional semiconductors, hot electrons, balance equations

中图分类号:  (High-field and nonlinear effects)

  • 72.20.Ht
73.63.Hs (Quantum wells) 78.67.De (Quantum wells) 72.80.Ey (III-V and II-VI semiconductors) 78.30.Fs (III-V and II-VI semiconductors) 72.30.+q (High-frequency effects; plasma effects)