中国物理B ›› 2001, Vol. 10 ›› Issue (9): 844-846.doi: 10.1088/1009-1963/10/9/314

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

COULOMB BLOCKADE OSCILLATIONS OF Si SINGLE-ELECTRON TRANSISTORS

王太宏, 李宏伟, 周均铭   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2001-04-10 修回日期:2001-03-28 出版日期:2005-06-12 发布日期:2005-06-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 69925410 and 19904015).

COULOMB BLOCKADE OSCILLATIONS OF Si SINGLE-ELECTRON TRANSISTORS

Wang Tai-hong (王太宏), Li Hong-wei (李宏伟), Zhou Jun-ming (周均铭)   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2001-04-10 Revised:2001-03-28 Online:2005-06-12 Published:2005-06-12
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 69925410 and 19904015).

PDF (PC)

673

赞

摘要： Coulomb blockade oscillations of Si single-electron transistors, which are fabricated completely by the conventional photolithography technique, have been investigated. Most of the single-electron transistors clearly show Coulomb blockade oscillations and these oscillations can be periodic by applying negative voltages to the in-plane gates. A shift of the peak positions is observed at high temperatures. It is also found that the fluctuation of the peak spacing cannot be neglected.

Abstract: Coulomb blockade oscillations of Si single-electron transistors, which are fabricated completely by the conventional photolithography technique, have been investigated. Most of the single-electron transistors clearly show Coulomb blockade oscillations and these oscillations can be periodic by applying negative voltages to the in-plane gates. A shift of the peak positions is observed at high temperatures. It is also found that the fluctuation of the peak spacing cannot be neglected.

Key words: single-electron tunnelling, Coulomb blockade, quantum dots

中图分类号:  (Coulomb blockade; single-electron tunneling)

  • 73.23.Hk
85.35.Gv (Single electron devices) 73.63.Kv (Quantum dots)