The nonlinear optical properties of a magneto-exciton in a strained Ga0.2In0.8As/GaAs quantum dot

doi:10.1088/1674-1056/22/10/107106

中国物理B ›› 2013, Vol. 22 ›› Issue (10): 107106-107106.doi: 10.1088/1674-1056/22/10/107106

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The nonlinear optical properties of a magneto-exciton in a strained Ga_0.2In_0.8As/GaAs quantum dot

N. R. Senthil Kumar^a, A. John Peter^b, Chang Kyoo Yoo^c

a Department of Physics, SBM College of Engineering and Technology, Dindigul-624 005, India;
b Department of Physics, Govt. Arts College, Melur-625 106, Madurai, India;
c Center for Environmental Studies/Green Energy Center, Deptartment of Environmental Science and Engineering, College of Engineering, Kyung Hee University, Seocheon-dong 1, Giheung-gu, Yongin-Si, Gyeonggi-Do, 446-701, South Korea

收稿日期:2013-03-03 修回日期:2013-04-03 出版日期:2013-08-30 发布日期:2013-08-30

The nonlinear optical properties of a magneto-exciton in a strained Ga_0.2In_0.8As/GaAs quantum dot

N. R. Senthil Kumar^a, A. John Peter^b, Chang Kyoo Yoo^c

a Department of Physics, SBM College of Engineering and Technology, Dindigul-624 005, India;
b Department of Physics, Govt. Arts College, Melur-625 106, Madurai, India;
c Center for Environmental Studies/Green Energy Center, Deptartment of Environmental Science and Engineering, College of Engineering, Kyung Hee University, Seocheon-dong 1, Giheung-gu, Yongin-Si, Gyeonggi-Do, 446-701, South Korea

Received:2013-03-03 Revised:2013-04-03 Online:2013-08-30 Published:2013-08-30
Contact: A. John Peter E-mail:a.john.peter@gmail.com

摘要/Abstract

摘要： The magnetic field-dependent heavy hole excitonic states in a strained Ga_0.2In_0.8As/GaAs quantum dot are investigated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga_0.2In_0.8As/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Ga_0.2In_0.8As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.

关键词: oscillator strength, exciton, quantum dot

Abstract: The magnetic field-dependent heavy hole excitonic states in a strained Ga_0.2In_0.8As/GaAs quantum dot are investigated by taking into account the anisotropy, non-parabolicity of the conduction band, and the geometrical confinement. The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material. The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured. The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field. The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied. The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga_0.2In_0.8As/GaAs quantum dot. Heavy hole excitonic absorption spectra, the changes in refractive index, and the third-order susceptibility of third-order harmonic generation are investigated in the Ga_0.2In_0.8As/GaAs quantum dot. The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.

Key words: oscillator strength, exciton, quantum dot

中图分类号: (Landau levels)

71.70.Di

72.20.Ht (High-field and nonlinear effects) 73.20.Hb (Impurity and defect levels; energy states of adsorbed species) 73.21.La (Quantum dots)

N. R. Senthil Kumar, A. John Peter, Chang Kyoo Yoo. The nonlinear optical properties of a magneto-exciton in a strained Ga_0.2In_0.8As/GaAs quantum dot[J]. 中国物理B, 2013, 22(10): 107106-107106.

N. R. Senthil Kumar, A. John Peter, Chang Kyoo Yoo. The nonlinear optical properties of a magneto-exciton in a strained Ga_0.2In_0.8As/GaAs quantum dot[J]. Chin. Phys. B, 2013, 22(10): 107106-107106.

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The nonlinear optical properties of a magneto-exciton in a strained Ga_0.2In_0.8As/GaAs quantum dot

The nonlinear optical properties of a magneto-exciton in a strained Ga_0.2In_0.8As/GaAs quantum dot

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