中国物理B ›› 2000, Vol. 9 ›› Issue (4): 309-312.doi: 10.1088/1009-1963/9/4/011

• • 上一篇    

MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

褚君浩1, 廖显伯2, 孔光临2, 马智训3   

  1. (1)National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (2)State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China; (3)State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Acad
  • 收稿日期:1999-07-18 出版日期:2000-04-15 发布日期:2005-06-12

MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Ma Zhi-xun (马智训)ab, Liao Xian-bo (廖显伯)a, Kong Guang-lin (孔光临)a, Chu Jun-hao (褚君浩)b   

  1. a State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China;   b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:1999-07-18 Online:2000-04-15 Published:2005-06-12

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摘要： The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

Abstract: The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

中图分类号:  (Disordered solids)

  • 78.30.Ly
78.55.Qr (Amorphous materials; glasses and other disordered solids) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.40.Gh (Other heat and thermomechanical treatments)