中国物理B ›› 1994, Vol. 3 ›› Issue (8): 595-607.doi: 10.1088/1004-423X/3/8/006

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

STUDY OF PHOTON-TRAPPING PHENOMENON IN POROUS SILICON LAYER

陈良尧, 侯晓远, 黄大鸣, 张甫龙, 冯星伟, 杨敏, 苏毅, 钱佑华, 王迅   

  1. Department of Physics, Fudan University, Shanghai 200433, China
  • 收稿日期:1993-07-26 出版日期:1994-08-20 发布日期:1994-08-20
  • 基金资助:
    Project supported by the State Education Commission, the State Science and Technology Commission, and the National Natural Science Foundation of China.

STUDY OF PHOTON-TRAPPING PHENOMENON IN POROUS SILICON LAYER

CHEN LIANG-YAO (陈良尧), HOU XIAO-YUAN (侯晓远), HUANG DA-MING (黄大鸣), ZHANG FU-LONG (张甫龙), FENG XING-WEI (冯星伟), YANG MIN (杨敏), SU YI (苏毅), QIAN YOU-HUA (钱佑华), WANG XUN (王迅)   

  1. Department of Physics, Fudan University, Shanghai 200433, China
  • Received:1993-07-26 Online:1994-08-20 Published:1994-08-20
  • Supported by:
    Project supported by the State Education Commission, the State Science and Technology Commission, and the National Natural Science Foundation of China.

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摘要： Porous silicon samples were prepared for optical studies by using the photoluminescence (PL), Raman scattering (RS), as well as the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optic constants, and can trap the visible photons of more than 95%, but give no evidence of a strong interband transition existing in the vis-ible region. The Bruggeman effective-medium-approximation (EMA) and Lorentz oscillator models were used in data analyses. Calculations show that the layer dispersion effect may result in a red shift of the PL peak. The possible mechanism for the PL and Raman enhance-ment as well as the photon trap phenomenon was discussed, and was attributed mainly to the random multiple micro-reflections in the porous-Si layer having extremely large internal micro-Burfaces.

Abstract: Porous silicon samples were prepared for optical studies by using the photoluminescence (PL), Raman scattering (RS), as well as the absolute reflectance and ellipsometry methods. Results show that the porous Si has low optic constants, and can trap the visible photons of more than 95%, but give no evidence of a strong interband transition existing in the vis-ible region. The Bruggeman effective-medium-approximation (EMA) and Lorentz oscillator models were used in data analyses. Calculations show that the layer dispersion effect may result in a red shift of the PL peak. The possible mechanism for the PL and Raman enhance-ment as well as the photon trap phenomenon was discussed, and was attributed mainly to the random multiple micro-reflections in the porous-Si layer having extremely large internal micro-Burfaces.

中图分类号:  (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))

  • 78.20.Ci
78.55.Mb (Porous materials) 78.30.Ly (Disordered solids) 81.05.Rm (Porous materials; granular materials) 78.66.Db (Elemental semiconductors and insulators)