MICROSTRUCTURE OF SiOx:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

doi:10.1088/1009-1963/9/4/011

中国物理B ›› 2000, Vol. 9 ›› Issue (4): 309-312.doi: 10.1088/1009-1963/9/4/011

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MICROSTRUCTURE OF SiO_x:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

褚君浩¹, 廖显伯², 孔光临², 马智训³

(1)National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; (2)State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China; (3)State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Acad

收稿日期:1999-07-18 出版日期:2000-04-15 发布日期:2005-06-12

MICROSTRUCTURE OF SiO_x:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Ma Zhi-xun (马智训)^ab, Liao Xian-bo (廖显伯)^a, Kong Guang-lin (孔光临)^a, Chu Jun-hao (褚君浩)^b

^a State Key Laboratory for Surface Physics, Institute of Semiconductors, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China; ^b National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Received:1999-07-18 Online:2000-04-15 Published:2005-06-12

摘要/Abstract

摘要： The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiO_x:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiO_x:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO₂ and HSi-O₃. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

Abstract: The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiO_x:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiO_x:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO₂ and HSi-O₃. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.

中图分类号: (Disordered solids)

78.30.Ly

78.55.Qr (Amorphous materials; glasses and other disordered solids) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.40.Gh (Other heat and thermomechanical treatments)

马智训, 廖显伯, 孔光临, 褚君浩. MICROSTRUCTURE OF SiO_x:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION[J]. 中国物理B, 2000, 9(4): 309-312.

Ma Zhi-xun (马智训), Liao Xian-bo (廖显伯), Kong Guang-lin (孔光临), Chu Jun-hao (褚君浩). MICROSTRUCTURE OF SiO_x:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION[J]. Chinese Physics, 2000, 9(4): 309-312.

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MICROSTRUCTURE OF SiO_x:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

MICROSTRUCTURE OF SiO_x:H FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

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