中国物理B ›› 2000, Vol. 9 ›› Issue (4): 309-312.doi: 10.1088/1009-1963/9/4/011
• • 上一篇
褚君浩1, 廖显伯2, 孔光临2, 马智训3
Ma Zhi-xun (马智训)ab, Liao Xian-bo (廖显伯)a, Kong Guang-lin (孔光临)a, Chu Jun-hao (褚君浩)b
摘要: The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (a-SiOx:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique. It is found that a-SiOx:H consists of two phases: an amorphous silicon-rich phase and an oxygen-rich phase mainly comprised of HSi-SiO2 and HSi-O3. The Raman scattering results exhibit that the frequency of TO-like mode of amorphous silicon red-shifts with decreasing size of silicon-rich region. This is related to the quantum confinement effects, similar to the nanocrystalline silicon.
中图分类号: (Disordered solids)