中国物理B ›› 1999, Vol. 8 ›› Issue (9): 682-689.doi: 10.1088/1004-423X/8/9/007

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

TWO-DIMENSIONAL HOT-ELECTRON TRANSPORT IN GaAs-AlGaAs HETEROJUNCTIONS

翁明琪, 吴杭生   

  1. Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:1999-02-02 出版日期:1999-09-20 发布日期:1999-09-20

TWO-DIMENSIONAL HOT-ELECTRON TRANSPORT IN GaAs-AlGaAs HETEROJUNCTIONS

Weng Ming-qi (翁明琪), Wu Hang-sheng (吴杭生)   

  1. Department of Physics, University of Science and Technology of China, Hefei 230026, China
  • Received:1999-02-02 Online:1999-09-20 Published:1999-09-20

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摘要： The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is re-computed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result shows better agreement with the experimental data.

Abstract: The mobility of a two-dimensional electron gas in GaAs-AlGaAs heterojunction is re-computed through solving numerically the balance equation. The peculiarity of the present study lies in that a new expression for the distribution function and the renormalized phonon frequency are used in the computation. Compared with those reported by previous authors, our result shows better agreement with the experimental data.

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
72.20.Ht (High-field and nonlinear effects) 63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials) 72.10.-d (Theory of electronic transport; scattering mechanisms)