中国物理B ›› 1997, Vol. 6 ›› Issue (7): 517-521.doi: 10.1088/1004-423X/6/7/006
M.C.POLO1, G.SANCHEZ1, J.ESTEVE1, 王万录2, 廖克俊2, 张振刚3, 廖梅勇3
WANG WAN-LU (王万录)a, LIAO KE-JUN (廖克俊)a, ZHANG ZHEN-GANG (张振刚)b, LIAO MEI-YONG (廖梅勇)b, M.C.POLOc, G.SANCHEZc, J.ESTEVEc
摘要: Applying a proper negative bias-voltage onto the substrate, on which diamond lilm is deposited by chemical vapor deposition technique, can greatly improve the nucleation density. While nucle-ation enhancing, both the ion bombardment and electron emission may play an important role sepa-rately. However, for the highest nucleation density, both of the two effects must act together.
中图分类号: (Nucleation and growth)