中国物理B ›› 1997, Vol. 6 ›› Issue (7): 517-521.doi: 10.1088/1004-423X/6/7/006

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NUCLEATION ENHANCEMENT OF DIAMOND FILMS BY ION BOMBARDING AND ELECTRON EMITTING EFFECTS

M.C.POLO1, G.SANCHEZ1, J.ESTEVE1, 王万录2, 廖克俊2, 张振刚3, 廖梅勇3   

  1. (1)Department de Fisica Aplicada Electronica, Universitat de Barcelona, Barcelona, Spain; (2)Department of Applied Physics, Chongqing University, Chongqing 630044, China; (3)Department of Physics, Lanzhou University, Lanzhou 730001, China
  • 收稿日期:1996-10-25 出版日期:1997-07-20 发布日期:1997-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

NUCLEATION ENHANCEMENT OF DIAMOND FILMS BY ION BOMBARDING AND ELECTRON EMITTING EFFECTS

WANG WAN-LU (王万录)a, LIAO KE-JUN (廖克俊)a, ZHANG ZHEN-GANG (张振刚)b, LIAO MEI-YONG (廖梅勇)b, M.C.POLOc, G.SANCHEZc, J.ESTEVEc   

  1. a Department of Applied Physics, Chongqing University, Chongqing 630044, China; 
    b Department of Physics, Lanzhou University, Lanzhou 730001, China;
    c Department de Fisica Aplicada Electronica, Universitat de Barcelona, Barcelona, Spain; 
  • Received:1996-10-25 Online:1997-07-20 Published:1997-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： Applying a proper negative bias-voltage onto the substrate, on which diamond lilm is deposited by chemical vapor deposition technique, can greatly improve the nucleation density. While nucle-ation enhancing, both the ion bombardment and electron emission may play an important role sepa-rately. However, for the highest nucleation density, both of the two effects must act together.

Abstract: Applying a proper negative bias-voltage onto the substrate, on which diamond lilm is deposited by chemical vapor deposition technique, can greatly improve the nucleation density. While nucle-ation enhancing, both the ion bombardment and electron emission may play an important role sepa-rately. However, for the highest nucleation density, both of the two effects must act together.

中图分类号:  (Nucleation and growth)

  • 68.55.A-
81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 79.20.Kz (Other electron-impact emission phenomena)