中国物理B ›› 1996, Vol. 5 ›› Issue (6): 456-462.doi: 10.1088/1004-423X/5/6/007

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ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL

崔堑1, 周钧铭1, 黄绮1, 董文甫2, 杨沁清2, 黎建2, 王启明2   

  1. (1)Institute of Physics, Academia Sinica, Beijing 100080, China; (2)National Integrated Opto-electronics Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • 收稿日期:1995-03-18 修回日期:1996-01-03 出版日期:1996-06-20 发布日期:1996-06-20

ELECTRO-LUMINESCENCE AND PHOTO-LUMINESCENCE FROM STRAINED SiGe/Si QUANTUM WELL

DONG WEN-FU (董文甫)a, YANG QIN-QING (杨沁清)a, LI JIAN (黎建)a, WANG QI-MING (王启明)a, CHUI QIAN (崔堑)b, ZHOU JUN-MING (周钧铭)b, HUANG QI (黄绮)b   

  1. a National Integrated Opto-electronics Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083, China; b Institute of Physics, Academia Sinica, Beijing 100080, China
  • Received:1995-03-18 Revised:1996-01-03 Online:1996-06-20 Published:1996-06-20

摘要: Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.

Abstract: Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed.

中图分类号:  (Electroluminescence)

  • 78.60.Fi
78.55.Hx (Other solid inorganic materials) 73.61.Le (Other inorganic semiconductors) 78.67.De (Quantum wells) 73.63.Hs (Quantum wells) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)