中国物理B ›› 1995, Vol. 4 ›› Issue (7): 523-530.doi: 10.1088/1004-423X/4/7/006

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

PHOTOLUMINESCENCE STUDY OF GaAs/AlGaAs QUANTUM WELL HETEROSTRUCTURE INTERFACES

袁之良, 徐仲英, 许继宗, 郑宝真, 罗昌平, 杨小平, 张鹏华   

  1. State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • 收稿日期:1994-09-15 出版日期:1995-07-20 发布日期:1995-07-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

PHOTOLUMINESCENCE STUDY OF GaAs/AlGaAs QUANTUM WELL HETEROSTRUCTURE INTERFACES

YUAN ZHI-LIANG (袁之良), XU ZHONG-YING (徐仲英), XU JI-ZONG (许继宗), ZHENG BAO-ZHEN (郑宝真), LUO CHANG-PING (罗昌平), YANG XIAO-PING (杨小平), ZHANG PENG-HUA (张鹏华)   

  1. State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • Received:1994-09-15 Online:1995-07-20 Published:1995-07-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： Photoluminescence (PL) ia used to study the interface properties of GaAs/AlGaAs quan-tum well (QW) heterostructures prepared by molecular beam epitaxy with growth interrup-tion (GI). The discrete luminescence lines observed for the sample with GI are assigned to the splitting of the heavy-hole exciton associated with heterointerface islands with the lateral size greater than excjton diameter and mean height less than one monolayer, and the spectra have the Gaussian lineshapes. The results strongly support the microroughness model. We also study the temperature dependence of the exciton energies and find that excitons are localized at the interface roughness at low temperature even in the sample with GI, The lateral size of the microroughness of the GI sample is estimated to be less than 5nm from the exciton localization energy.

Abstract: Photoluminescence (PL) ia used to study the interface properties of GaAs/AlGaAs quan-tum well (QW) heterostructures prepared by molecular beam epitaxy with growth interrup-tion (GI). The discrete luminescence lines observed for the sample with GI are assigned to the splitting of the heavy-hole exciton associated with heterointerface islands with the lateral size greater than excjton diameter and mean height less than one monolayer, and the spectra have the Gaussian lineshapes. The results strongly support the microroughness model. We also study the temperature dependence of the exciton energies and find that excitons are localized at the interface roughness at low temperature even in the sample with GI, The lateral size of the microroughness of the GI sample is estimated to be less than 5nm from the exciton localization energy.

中图分类号:  (Quantum wells)

  • 78.67.De
78.55.Cr (III-V semiconductors) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 71.35.-y (Excitons and related phenomena) 68.35.Ct (Interface structure and roughness) 73.21.Fg (Quantum wells)