中国物理B ›› 1995, Vol. 4 ›› Issue (12): 923-932.doi: 10.1088/1004-423X/4/12/007

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    

THEORETICAL AND EXPERIMENTAL INVESTIGATION ON ANOMALOUS HALL EFFECT OF HETEROGENOUS SEMICONDUCTOR SAMPLES

姜伟, 鲁刚, 宋录武   

  1. Department of Fundamental Courses, Liaoyang Petrochemical Engineering College, Liaoyang 111003, China
  • 收稿日期:1994-12-09 出版日期:1995-12-20 发布日期:1995-12-20

THEORETICAL AND EXPERIMENTAL INVESTIGATION ON ANOMALOUS HALL EFFECT OF HETEROGENOUS SEMICONDUCTOR SAMPLES

JIANG WEI (姜伟), Lu Gang (鲁刚), Song Lu-wu (宋录武)   

  1. Department of Fundamental Courses, Liaoyang Petrochemical Engineering College, Liaoyang 111003, China
  • Received:1994-12-09 Online:1995-12-20 Published:1995-12-20

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摘要： Based on the theoretical results of inversion layers model and interpenetrating network model, we studied the anomalous Hall effect of heterogenous semiconductor samples, and obtained the following results: (1) the wider the sample energy gap, the higher the temper-ature at which anomalous Hall effect begins to appear; (2) the lower the sample resistivity, the higher the temperature at which anomalous Hall effect begins to appear, which is further verified in our experiment; (3) mobility is the main factor which determines what role p-n junction plays in sample Hall voltage; (4) for n-Ge sample with inversion layers structure, with the increase of p-type region, the Hall effect changes from normal n-type Hall effect to anomalous Hall effect of the single dip type, then to anomalous Hall effect of the second reversal type.

Abstract: Based on the theoretical results of inversion layers model and interpenetrating network model, we studied the anomalous Hall effect of heterogenous semiconductor samples, and obtained the following results: (1) the wider the sample energy gap, the higher the temper-ature at which anomalous Hall effect begins to appear; (2) the lower the sample resistivity, the higher the temperature at which anomalous Hall effect begins to appear, which is further verified in our experiment; (3) mobility is the main factor which determines what role p-n junction plays in sample Hall voltage; (4) for n-Ge sample with inversion layers structure, with the increase of p-type region, the Hall effect changes from normal n-type Hall effect to anomalous Hall effect of the single dip type, then to anomalous Hall effect of the second reversal type.

中图分类号:  (Galvanomagnetic and other magnetotransport effects)

  • 72.20.My
71.20.Nr (Semiconductor compounds) 72.80.Ey (III-V and II-VI semiconductors)