Growth and characterization of single crystals of the quaternary TlGaSeS compound

doi:10.1088/1674-1056/22/5/058105

中国物理B ›› 2013, Vol. 22 ›› Issue (5): 58105-058105.doi: 10.1088/1674-1056/22/5/058105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Growth and characterization of single crystals of the quaternary TlGaSeS compound

S. R. Alharbi

Physics Department, Faculty of Sciences, King Abdulaziz University, KSA

收稿日期:2012-07-26 修回日期:2012-10-22 出版日期:2013-04-01 发布日期:2013-04-01

Growth and characterization of single crystals of the quaternary TlGaSeS compound

S. R. Alharbi

Physics Department, Faculty of Sciences, King Abdulaziz University, KSA

Received:2012-07-26 Revised:2012-10-22 Online:2013-04-01 Published:2013-04-01
Contact: S. R. Alharbi E-mail:sr_alharbi@yahoo.com

摘要/Abstract

摘要： The electrical conductivity and Hall effect for TlGaSeS crystals have been investigated over a wide temperature range. The crystals we used are grown by a modified Bridgman technique and possess p-type conductivity. The energy gap has been found to be 1.63 eV, whereas the ionization energy is 0.25 eV. The variations of the Hall mobility as well as the carrier concentration with temperature have been investigated. The scattering mechanisms of the carrier are checked over the whole investigated temperature range. Furthermore, the diffusion coefficient, relaxation time, and diffusion length of holes are estimated.

关键词: crystal growth, DC electrical conductivity, Hall effect, TlGaSeS compound

Abstract: The electrical conductivity and Hall effect for TlGaSeS crystals have been investigated over a wide temperature range. The crystals we used are grown by a modified Bridgman technique and possess p-type conductivity. The energy gap has been found to be 1.63 eV, whereas the ionization energy is 0.25 eV. The variations of the Hall mobility as well as the carrier concentration with temperature have been investigated. The scattering mechanisms of the carrier are checked over the whole investigated temperature range. Furthermore, the diffusion coefficient, relaxation time, and diffusion length of holes are estimated.

Key words: crystal growth, DC electrical conductivity, Hall effect, TlGaSeS compound

中图分类号: (Growth from melts; zone melting and refining)

81.10.Fq

72.20.-i (Conductivity phenomena in semiconductors and insulators) 72.20.My (Galvanomagnetic and other magnetotransport effects)

S. R. Alharbi. Growth and characterization of single crystals of the quaternary TlGaSeS compound[J]. 中国物理B, 2013, 22(5): 58105-058105.

S. R. Alharbi. Growth and characterization of single crystals of the quaternary TlGaSeS compound[J]. Chin. Phys. B, 2013, 22(5): 58105-058105.

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Growth and characterization of single crystals of the quaternary TlGaSeS compound

Growth and characterization of single crystals of the quaternary TlGaSeS compound

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