中国物理B ›› 2009, Vol. 18 ›› Issue (12): 5431-5436.doi: 10.1088/1674-1056/18/12/050

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Orbital magnetization in semiconductors

王志刚1, 张平2, 李树深3, 方诚4   

  1. (1)Institute of Applied Physics and Computational Mathematics, Beijing 100088, China; (2)Institute of Applied Physics and Computational Mathematics, Beijing 100088, China;Center for Applied Physics and Technology, Peking University, Beijing 100871, China; (3)Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (4)Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Physics Department, East China Institute of Technology, Fuzhou 344000, Jiangxi Province, China;Institute of Applied Physics
  • 收稿日期:2009-03-12 修回日期:2009-04-07 出版日期:2009-12-20 发布日期:2009-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60821061, 60776061, 10604010 and 60776063).

Orbital magnetization in semiconductors

Fang Cheng(方诚)a)b)c), Wang Zhi-Gang(王志刚)c), Li Shu-Shen(李树深)a), and Zhang Ping(张平)c)d)†   

  1. a Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; b Physics Department, East China Institute of Technology, Fuzhou 344000, Jiangxi Province, China; c Institute of Applied Physics and Computational Mathematics, Beijing 100088, China; d Center for Applied Physics and Technology, Peking University, Beijing 100871, China
  • Received:2009-03-12 Revised:2009-04-07 Online:2009-12-20 Published:2009-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 60821061, 60776061, 10604010 and 60776063).

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摘要： This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin--orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin--orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10-2--10-1 effective Bohr magneton and 10-1--1 e2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.

Abstract: This paper theoretically investigates the orbital magnetization of electron-doped (n-type) semiconductor heterostructures and of hole-doped (p-type) bulk semiconductors, which are respectively described by a two-dimensional electron/hole Hamiltonian with both the included Rashba spin--orbit coupling and Zeeman splitting terms. It is the Zeeman splitting, rather than the Rashba spin--orbit coupling, that destroys the time-reversal symmetry of the semiconductor systems and results in nontrivial orbital magnetization. The results show that the magnitude of the orbital magnetization per hole and the Hall conductance in the p-type bulk semiconductors are about 10-2--10-1 effective Bohr magneton and 10-1--1 e2/h, respectively. However, the orbital magnetization per electron and the Hall conductance in the n-type semiconductor heterostructures are too small to be easily observed in experiment.

Key words: orbital magnetization, Zeeman splitting, Berry phase effect, semiconductor

中图分类号:  (Magnetization curves, hysteresis, Barkhausen and related effects)

  • 75.60.Ej
71.70.Ej (Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect) 72.20.My (Galvanomagnetic and other magnetotransport effects) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 75.50.Pp (Magnetic semiconductors)