中国物理B ›› 1993, Vol. 2 ›› Issue (9): 658-663.doi: 10.1088/1004-423X/2/9/003
王健1, 蒋红兵1, 王文澄1, 郑家骠1, 张甫龙2, 郝平海2, 侯晓远2, 王迅2
WANG JIAN (王健)a, JIANG HONG-BING (蒋红兵)a, WANG WEN-CHENG (王文澄)a, ZHENG JIA-BIAO (郑家骠)a, ZHANG FU-LONG (张甫龙)b, HAO PING-HAI (郝平海)b, HOU XIAO-YUAN (侯晓远)b, WANG XUN (王迅)b
摘要: It is demonstrated in this paper that the infrared-up-conversion luminescence generation from porous silicon, considered as an enhanced third-order nonlinear optical effect by the recent work, is anisotropic as the polarization vector of normally incident fundamental light is rotated. A new method has been used to determine the anisotropy parameter σ of the third-order nonlinear optical tensor χ(3). Due to the sensitivity of σ to the crystal structure and microscopic electronic properties, the difference in σ′s between porous and crystalline silicon, particularly in their phases, demonstrates that the nanometer structure of porous silicon induces a dra-matic change of the electronic band structure, but the strongly anisotropic crystal property remains unchanged.
中图分类号: (Porous materials)