中国物理B ›› 1993, Vol. 2 ›› Issue (9): 658-663.doi: 10.1088/1004-423X/2/9/003

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ANISOTROPIC INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON

王健1, 蒋红兵1, 王文澄1, 郑家骠1, 张甫龙2, 郝平海2, 侯晓远2, 王迅2   

  1. (1)Laboratory of Laser Physics and Optics, Fudan University, Shanghai 200433, China; (2)Surface Physics Laboratory, Fudan University, Shanghai 200433, China
  • 收稿日期:1992-09-08 出版日期:1993-09-20 发布日期:1993-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

ANISOTROPIC INFRARED-UP-CONVERSION LUMINESCENCE GENERATION IN POROUS SILICON

WANG JIAN (王健)a, JIANG HONG-BING (蒋红兵)a, WANG WEN-CHENG (王文澄)a, ZHENG JIA-BIAO (郑家骠)a, ZHANG FU-LONG (张甫龙)b, HAO PING-HAI (郝平海)b, HOU XIAO-YUAN (侯晓远)b, WANG XUN (王迅)b   

  1. a Laboratory of Laser Physics and Optics, Fudan University, Shanghai 200433, China; b Surface Physics Laboratory, Fudan University, Shanghai 200433, China
  • Received:1992-09-08 Online:1993-09-20 Published:1993-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

摘要: It is demonstrated in this paper that the infrared-up-conversion luminescence generation from porous silicon, considered as an enhanced third-order nonlinear optical effect by the recent work, is anisotropic as the polarization vector of normally incident fundamental light is rotated. A new method has been used to determine the anisotropy parameter σ of the third-order nonlinear optical tensor χ(3). Due to the sensitivity of σ to the crystal structure and microscopic electronic properties, the difference in σ′s between porous and crystalline silicon, particularly in their phases, demonstrates that the nanometer structure of porous silicon induces a dra-matic change of the electronic band structure, but the strongly anisotropic crystal property remains unchanged.

Abstract: It is demonstrated in this paper that the infrared-up-conversion luminescence generation from porous silicon, considered as an enhanced third-order nonlinear optical effect by the recent work, is anisotropic as the polarization vector of normally incident fundamental light is rotated. A new method has been used to determine the anisotropy parameter $\sigma$ of the third-order nonlinear optical tensor $\chi$(3). Due to the sensitivity of $\sigma$ to the crystal structure and microscopic electronic properties, the difference in $\sigma$′s between porous and crystalline silicon, particularly in their phases, demonstrates that the nanometer structure of porous silicon induces a dra-matic change of the electronic band structure, but the strongly anisotropic crystal property remains unchanged.

中图分类号:  (Porous materials)

  • 78.55.Mb
61.43.Gt (Powders, porous materials) 71.23.Cq (Amorphous semiconductors, metallic glasses, glasses) 72.80.Ng (Disordered solids)