中国物理B ›› 1995, Vol. 4 ›› Issue (10): 783-789.doi: 10.1088/1004-423X/4/10/008
• • 上一篇
廖良生, 鲍希茂, 李宁生, 杨志峰, 闵乃本
LIAO LIANG-SHENG (廖良生), BAO XI-MAO (鲍希茂), LI NING-SHENG (李宁生), YANG ZHI-FENG (杨志峰), MIN NAI-BEN (闵乃本)
摘要: Crystal Si were implanted with different doses of C+ from 1011 to 1017 cm-2 at an energy of 50 keV. β-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C+ dose ≥1015 cm-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C+ dose increases; the samples with C+ dose ≤1014 cm-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of β-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous β-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission.
中图分类号: (Porous materials)